2SC2712-GR(TE85L,F Toshiba, 2SC2712-GR(TE85L,F Datasheet - Page 4

• Manufacturer Part Number: 2SC2712-GR(TE85L,F
• Description: Transistors Bipolar - BJT 150mA 50V
• Manufacturer: Toshiba

Specifications of 2SC2712-GR(TE85L,F

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 60 V
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.15 A
• Gain Bandwidth Product Ft: 80 MHz
• Dc Collector/base Gain Hfe Min: 200
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Package / Case: 2-3F1A
• Continuous Collector Current: 150 mA
• Dc Current Gain Hfe Max: 400
• Maximum Power Dissipation: 150 mW
• Factory Pack Quantity: 3000

2SC2712
4
2007-11-01