IS43R16160B-5TL-TR ISSI, Integrated Silicon Solution Inc, IS43R16160B-5TL-TR Datasheet - Page 34

• Manufacturer Part Number: IS43R16160B-5TL-TR
• Description: IC DDR SDRAM 256MBIT 66TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: SDRAMr

Specifications of IS43R16160B-5TL-TR

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 2.5 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOPII
• Organization: 16Mx16
• Density: 256Mb
• Address Bus: 15b
• Access Time (max): 700ps
• Maximum Clock Rate: 200MHz
• Operating Supply Voltage (typ): 2.5V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Pin Count: 66
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS43R83200B
IS43R16160B, IC43R16160B
34
DDR SDRAM (Rev.1.1)
I
I
[Write interrupted by Precharge]
access is allowed. tWR is referenced from the first positive CLK edge after the last data input.
Burst write operation can be interrupted by precharge of the same or all bank. Random column
Command
A0-9,11,12
BA0,1
/CLK
CLK
A10
DM
DQ
QS
WRITE
Yi
0
00
Preliminary
Preliminary
Dai0 Dai1
Write Interrupted by Precharge (BL=8, CL=2.5)
tWR
PRE
00
256M Double Data Rate Synchronous DRAM
Zentel Electronics Corporation
A3S56D30/40ETP
Integrated Silicon Solution, Inc.
10/31/08
Rev. B