2SB1203S-TL-E ON Semiconductor, 2SB1203S-TL-E Datasheet - Page 5

• Manufacturer Part Number: 2SB1203S-TL-E
• Description: Transistors Bipolar - BJT BIP PNP 5A 50V
• Manufacturer: ON Semiconductor

Specifications of 2SB1203S-TL-E

• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: - 60 V
• Collector- Emitter Voltage Vceo Max: - 50 V
• Emitter- Base Voltage Vebo: - 6 V
• Collector-emitter Saturation Voltage: - 0.28 V
• Maximum Dc Collector Current: - 8 A
• Gain Bandwidth Product Ft: 130 MHz
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-63
• Continuous Collector Current: - 5 A
• Dc Current Gain Hfe Max: 400
• Maximum Power Dissipation: 20 W
• Minimum Operating Temperature: - 55 C

0.01
1.0
0.1
10
2
7
5
3
2
7
5
3
2
7
5
3
2
0.1
I C
I CP
Tc=25 ° C
Single pulse
For PNP, the minus sign is omitted.
2
3
Collector-to-Emitter Voltage, V CE -- V
5
7
1.0
2
A S O
3
5
7
2SB1203 / 2SD1803
10
2
3
2SB1203/2SD1803
ITR09196
5
7
100
24
20
16
12
8
4
0
0
1
20
Ambient Temperature, Ta -- ° C
40
60
P C -- Ta
80
100
2SB1203 / 2SD1803
120
No. 2085-5/10
140
ITR09197
160