2SB1203S-TL-E ON Semiconductor, 2SB1203S-TL-E Datasheet - Page 7

• Manufacturer Part Number: 2SB1203S-TL-E
• Description: Transistors Bipolar - BJT BIP PNP 5A 50V
• Manufacturer: ON Semiconductor

Specifications of 2SB1203S-TL-E

• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: - 60 V
• Collector- Emitter Voltage Vceo Max: - 50 V
• Emitter- Base Voltage Vebo: - 6 V
• Collector-emitter Saturation Voltage: - 0.28 V
• Maximum Dc Collector Current: - 8 A
• Gain Bandwidth Product Ft: 130 MHz
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-63
• Continuous Collector Current: - 5 A
• Dc Current Gain Hfe Max: 400
• Maximum Power Dissipation: 20 W
• Minimum Operating Temperature: - 55 C

2SB1203/2SD1803
Outline Drawing
Land Pattern Example
2SB1203S-TL-E, 2SB1203S-Tl-H, 2SB1203T-TL-E, 2SB1203T-Tl-H, 2SB1803S-TL-E, 2SB1803S-Tl-H,
2SB1803T-TL-E, 2SB1803T-Tl-H
Mass (g) Unit
Unit: mm
0.282
mm
* For reference
7.0
1.5
2.3
2.3
No. 2085-7/10