2SC2712-Y(TE85L,F) Toshiba, 2SC2712-Y(TE85L,F) Datasheet - Page 2

• Manufacturer Part Number: 2SC2712-Y(TE85L,F)
• Description: Transistors Bipolar - BJT 150mA 50V
• Manufacturer: Toshiba

Specifications of 2SC2712-Y(TE85L,F)

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 60 V
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.15 A
• Gain Bandwidth Product Ft: 80 MHz (Min)
• Dc Collector/base Gain Hfe Min: 120
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Package / Case: USM
• Continuous Collector Current: 150 mA
• Dc Current Gain Hfe Max: 240
• Maximum Power Dissipation: 150 mW
• Factory Pack Quantity: 10000

Electrical Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Note: h
( ) marking symbol
FE
Characteristics
classification O (O): 70~140, Y (Y): 120~240, GR (G): 200~400, BL (L): 350~700
(Ta = 25°C)
V
Symbol
CE (sat)
I
I
CBO
EBO
h
C
NF
f
FE
T
ob
(Note)
V
V
V
I
V
V
V
R
C
CB
EB
CE
CE
CB
CE
g
= 100 mA, I
= 10 kΩ
= 60 V, I
= 5 V, I
= 6 V, I
= 10 V, I
= 10 V, I
= 6 V, I
2
C
C
C
Test Condition
E
C
E
= 0
= 2 mA
= 0.1 mA, f = 1 kHz,
B
= 0
= 0, f = 1 MHz
= 1 mA
= 10 mA
Min
70
80
⎯
⎯
⎯
⎯
⎯
Typ.
0.1
2.0
1.0
⎯
⎯
⎯
⎯
2007-11-01
2SC2712
0.25
Max
700
0.1
0.1
3.5
10
⎯
MHz
Unit
μA
μA
pF
dB
V