2SC2712-Y(TE85L,F) Toshiba, 2SC2712-Y(TE85L,F) Datasheet - Page 4

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2SC2712-Y(TE85L,F)

Manufacturer Part Number
2SC2712-Y(TE85L,F)
Description
Transistors Bipolar - BJT 150mA 50V
Manufacturer
Toshiba
Datasheet

Specifications of 2SC2712-Y(TE85L,F)

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
60 V
Collector- Emitter Voltage Vceo Max
50 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.15 A
Gain Bandwidth Product Ft
80 MHz (Min)
Dc Collector/base Gain Hfe Min
120
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Package / Case
USM
Continuous Collector Current
150 mA
Dc Current Gain Hfe Max
240
Maximum Power Dissipation
150 mW
Factory Pack Quantity
10000
2SC2712
4
2007-11-01

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