IS42S32200E-6BLI-TR ISSI, Integrated Silicon Solution Inc, IS42S32200E-6BLI-TR Datasheet

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... IS42S32200E IS45S32200E 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM FEATURES • Clock frequency: 200, 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single 3.3V power supply • ...

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... IS42S32200E, IS45S32200E GENERAL DESCRIPTION The 64Mb SDRAM is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V memory systems containing 67,108,864 bits. Internally configured as a quad-bank DRAM with a synchronous interface. Each 16,777,216-bit bank is organized as 2,048 rows by 256 columns by 32 bits. The 64Mb SDRAM includes an AUTO REFRESH MODE, and a power-saving, power-down mode ...

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... IS42S32200E, IS45S32200E PIN CONFIGURATIONS 86 pin TSOP - Type II for x32 V DD DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQM0 WE CAS RAS CS NC BA0 BA1 A10 DQM2 DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 V DD PIN DESCRIPTIONS A0-A10 Row Address Input ...

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... IS42S32200E, IS45S32200E PIN CONFIGURATION PACKAGE CODE BALL TF-BGA (Top View) (8. 13.00 mm Body, 0.8 mm Ball Pitch PIN DESCRIPTIONS A0-A10 Row Address Input A0-A7 Column Address Input BA0, BA1 Bank Select Address DQ0 to DQ31 Data I/O CLK System Clock Input CKE Clock Enable ...

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... IS42S32200E, IS45S32200E PIN FUNCTIONS Symbol Pin No. (TSOP) Type A0-A10 Input Pin BA0, BA1 22,23 Input Pin CAS 18 Input Pin CKE 67 Input Pin CLK 68 Input Pin CS 20 Input Pin DQ0 10,11,13 DQ Pin DQ31 74,76,77,79,80,82,83,85 45,47,48,50,51,53,54,56 31,33,34,36,37,39,40,42 DQM0 16,28,59,71 Input Pin DQM3 RAS ...

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... IS42S32200E, IS45S32200E READ The READ command selects the bank from BA0, BA1 inputs and starts a burst read access to an active row. Inputs A0-A7 provides the starting column location. When A10 is HIGH, this command functions as an AUTO PRECHARGE command. When the auto precharge is selected, the row being accessed will be precharged at the end of the READ burst ...

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... IS42S32200E, IS45S32200E LOAD MODE REGISTER During the LOAD MODE REGSITER command the mode register is loaded from A0-A10. This command can only be issued when all banks are idle. ACTIVE COMMAND When the ACTIVE COMMAND is activated, BA0, BA1 inputs selects a bank to be accessed, and the address inputs on A0-A10 selects the row ...

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... IS42S32200E, IS45S32200E TRUTH TABLE – COMMANDS AND DQM OPERATION FUNCTION COMMAND INHIBIT (NOP) NO OPERATION (NOP) ACTIVE (Select bank and activate row) READ (Select bank/column, start READ burst) WRITE (Select bank/column, start WRITE burst) BURST TERMINATE PRECHARGE (Deactivate row in bank or banks) AUTO REFRESH or SELF REFRESH ...

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... IS42S32200E, IS45S32200E TRUTH TABLE – CKE (1-4) CURRENT STATE COMMANDn Power-Down X Self Refresh X Clock Suspend X Power-Down COMMAND INHIBIT or NOP (5) Self Refresh COMMAND INHIBIT or NOP (6) Clock Suspend X (7) All Banks Idle COMMAND INHIBIT or NOP All Banks Idle AUTO REFRESH Reading or Writing VALID See TRUTH TABLE – ...

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... IS42S32200E, IS45S32200E 3. Current state definitions: Idle: The bank has been precharged, and t Row Active: A row in the bank has been activated, and t accesses are in progress. Read: A READ burst has been initiated, with auto precharge disabled, and has not yet terminated or been termi- nated ...

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... IS42S32200E, IS45S32200E TRUTH TABLE – CURRENT STATE BANK n, COMMAND TO BANK m CURRENT STATE COMMAND (ACTION) Any COMMAND INHIBIT (NOP/Continue previous operation) NO OPERATION (NOP/Continue previous operation) Idle Any Command Otherwise Allowed to Bank m Row ACTIVE (Select and activate row) Activating, READ (Select column and start READ burst) ...

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... IS42S32200E, IS45S32200E 8. CONCURRENT AUTO PRECHARGE: Bank n will initiate the AUTO PRECHARGE command when its burst has been inter- rupted by bank m’s burst. 9. Burst in bank n continues as initiated. 10. For a READ without auto precharge interrupted by a READ (with or without auto precharge), the READ to bank m will interrupt the READ on bank n, CAS latency later (Consecutive READ Bursts) ...

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... IS42S32200E, IS45S32200E FUNCTIONAL DESCRIPTION The 64Mb SDRAMs 512K banks) are quad-bank DRAMs which operate at 3.3V and include a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 16,777,216-bit banks is organized as 2,048 rows by 256 columns by 32bits. Read and write accesses to the SDRAM are burst oriented; ...

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... IS42S32200E, IS45S32200E REGISTER DEFINITION Mode Register The mode register is used to define the specific mode of operation of the SDRAM. This definition includes the selection of a burst length, a burst type, a CAS\ latency, an operating mode and a write burst mode, as shown in MODE REGISTER DEFINITION. The mode register is programmed via the LOAD MODE REGISTER command and will retain the stored information until it is programmed again or the device loses power ...

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... IS42S32200E, IS45S32200E Burst Length Read and write accesses to the SDRAM are burst oriented, with the burst length being programmable, as shown in MODE REGISTER DEFINITION. The burst length deter- mines the maximum number of column locations that can be accessed for a given READ or WRITE command. Burst ...

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... IS42S32200E, IS45S32200E CAS Latency The CAS latency is the delay, in clock cycles, between the registration of a READ command and the availability of the first piece of output data. The latency can be set to two or three clocks READ command is registered at clock edge n, and the latency is m clocks, the data will be available by clock edge ...

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... IS42S32200E, IS45S32200E OPERATION BANK/ROW ACTIVATION Before any READ or WRITE commands can be issued to a bank within the SDRAM, a row in that bank must be “opened.” This is accomplished via the ACTIVE command, which selects both the bank and the row to be activated (see Activating Specific Row Within Specific Bank). ...

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... IS42S32200E, IS45S32200E READS READ bursts are initiated with a READ command, as shown in the READ COMMAND diagram. The starting column and bank addresses are provided with the READ command, and auto precharge is either enabled or disabled for that burst access. If auto precharge is enabled, the row being accessed is precharged at the completion of the burst ...

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... IS42S32200E, IS45S32200E same bank.The PRECHARGE command should be issued x cycles before the clock edge at which the last desired data element is valid, where x equals the CAS latency minus one. This is shown in the READ to PRECHARGE diagram for each possible CAS latency; data element either the last of a burst of four or the last desired of a longer burst ...

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... IS42S32200E, IS45S32200E Consecutive READ Bursts T0 CLK COMMAND READ BANK, ADDRESS COL n DQ CAS Latency - CLK COMMAND READ NOP BANK, ADDRESS COL n DQ CAS Latency - NOP NOP NOP READ BANK, COL n+1 D OUT OUT NOP NOP READ BANK, COL n+1 OUT OUT Integrated Silicon Solution, Inc. — ...

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... IS42S32200E, IS45S32200E Random READ Accesses T0 CLK COMMAND READ BANK, ADDRESS COL CLK COMMAND READ BANK, ADDRESS COL n DQ CAS Latency - 3 Integrated Silicon Solution, Inc. — www.issi.com Rev. D 07/12/2010 READ READ READ BANK, BANK, BANK, COL b COL m COL OUT OUT CAS Latency - 2 ...

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... IS42S32200E, IS45S32200E RW1 - READ to WRITE CLK DQM COMMAND ADDRESS DQ RW2 - READ to WRITE With Extra Clock Cycle T0 CLK DQM COMMAND READ BANK, ADDRESS COL READ NOP NOP NOP BANK, COL n D CAS Lantency NOP NOP NOP OUT CAS Lantency 3 Integrated Silicon Solution, Inc. — www.issi.com ...

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... IS42S32200E, IS45S32200E READ to PRECHARGE T0 T1 CLK COMMAND READ NOP BANK a, ADDRESS COL n DQ CAS Latency - CLK COMMAND READ NOP BANK, ADDRESS COL n DQ CAS Latency - 3 Integrated Silicon Solution, Inc. — www.issi.com Rev. D 07/12/2010 NOP NOP NOP PRECHARGE cycle BANK (a or all) ...

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... IS42S32200E, IS45S32200E READ Burst Termination T0 CLK COMMAND READ BANK a, ADDRESS COL n DQ CAS Latency - CLK COMMAND READ NOP BANK, ADDRESS COL n DQ CAS Latency - BURST NOP NOP NOP TERMINATE n+1 D OUT OUT BURST NOP NOP TERMINATE cycles n+1 OUT OUT Integrated Silicon Solution, Inc. — www.issi.com ...

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... IS42S32200E, IS45S32200E WRITEs WRITE bursts are initiated with a WRITE command, as shown in WRITE Command diagram. WRITE Command CLK HIGH CKE CS RAS CAS WE A0-A7 COLUMN ADDRESS A8, A9 AUTO PRECHARGE A10 NO PRECHARGE BA0, BA1 BANK ADDRESS The starting column and bank addresses are provided with the WRITE command, and auto precharge is either enabled or disabled for that access ...

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... IS42S32200E, IS45S32200E WRITE Burst CLK COMMAND ADDRESS Burst length = 2 DQM ix low. WRITE to WRITE COMMAND DQMx is low. Each Write Command may be to any bank. Random WRITE Cycles CLK COMMAND ADDRESS DQMx is low. Each Write Command may be to any bank WRITE NOP NOP ...

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... IS42S32200E, IS45S32200E WRITE to READ T0 CLK COMMAND WRITE BANK, ADDRESS COL WRITE to PRECHARGE ( CLK DQM COMMAND WRITE BANK a, ADDRESS COL Integrated Silicon Solution, Inc. — www.issi.com Rev. D 07/12/2010 NOP READ NOP BANK, COL CLK (t ≥ NOP NOP NOP PRECHARGE BANK (a or all) ...

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... IS42S32200E, IS45S32200E WRITE to PRECHARGE ( CLK DQM WRITE COMMAND BANK a, ADDRESS COL WRITE Burst Termination COMMAND ADDRESS CLK (t > NOP NOP PRECHARGE BANK (a or all n CLK BURST WRITE TERMINATE BANK, COL DON'T CARE Integrated Silicon Solution, Inc. — www.issi.com NOP NOP ACTIVE ...

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... IS42S32200E, IS45S32200E PRECHARGE The PRECHARGE command (see figure) is used to deac- tivate the open row in a particular bank or the open row in all banks.The bank(s) will be available for a subsequent row access some specified time (t ) after the PRECHARGE rp command is issued. Input A10 determines whether one or ...

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... IS42S32200E, IS45S32200E CLOCK SUSPEND Clock suspend mode occurs when a column access/burst is in progress and CKE is registered LOW. In the clock suspend mode, the internal clock is deactivated, “freezing” the synchronous logic. For each positive clock edge on which CKE is sampled LOW, the next internal positive clock edge is suspended. ...

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... IS42S32200E, IS45S32200E BURST READ/SINGLE WRITE The burst read/single write mode is entered by programming the write burst mode bit (M9) in the mode register to a logic 1. In this mode, all WRITE commands result in the access of a single column location (burst of one), regardless of the programmed burst length. READ commands access ...

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... IS42S32200E, IS45S32200E WRITE with Auto Precharge 3. Interrupted by a READ (with or without auto precharge): A READ to bank m will interrupt a WRITE on bank n when registered, with the data-out appearing CAS latency later. The PRECHARGE to bank n will begin after t is met, where t begins when the READ to bank registered ...

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... IS42S32200E, IS45S32200E ABSOLUTE MAXIMUM RATINGS Symbol Parameters V Maximum Supply Voltage dd max V Maximum Supply Voltage for Output Buffer ddq max V Input Voltage iN V Output Voltage out P Allowable Power Dissipation d max I output Shorted Current cs T operating Temperature opr T Storage Temperature stg DC RECOMMENDED OPERATING CONDITIONS (T = 0° ...

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... IS42S32200E, IS45S32200E DC ELECTRICAL CHARACTERISTICS 1 Symbol Parameter i Operating Current (1) dd1 i Precharge Standby Current dd2p (In Power-Down Mode) i Precharge Standby Current dd2ps (In Power-Down Mode) i Precharge Standby Current dd2N (2) (In Non Power-Down Mode) I Precharge Standby Current dd2Ns (In Non Power-Down Mode) i Active Standby Current dd3N (2) (In Non Power-Down Mode) ...

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... IS42S32200E, IS45S32200E AC ELECTRICAL CHARACTERISTICS Symbol Parameter t Clock Cycle Time ck3 t ck2 t Access Time From CLK (4) ac3 t ac2 t CLK HIGH Level Width ch t CLK LOW Level Width cl t Output Data Hold Time oh t Output LOW Impedance Time lz t Output HIGH Impedance Time ...

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... IS42S32200E, IS45S32200E AC ELECTRICAL CHARACTERISTICS Symbol Parameter Condition t Input Data To Precharge CAS Latency = 3 dpl3 Command Delay time t CAS Latency = 2 dpl2 t Input Data To Active / Refresh CAS Latency = 3 dal3 Command Delay time (During Auto-Precharge) t CAS Latency = 2 dal2 t Transition Time ( Write Recovery Time wr t Exit Self Refresh to Active Time ...

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... IS42S32200E, IS45S32200E OPERATING FREQUENCY / LATENCY RELATIONSHIPS SYMBOL PARAMETER — Clock Cycle Time — Operating Frequency t READ/WRITE command to READ/WRITE command ccd t CKE to clock disable or power-down entry mode cked t CKE to clock enable or power-down exit setup mode ped t DQM to input data delay dqd t DQM to data mask during WRITEs ...

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... IS42S32200E, IS45S32200E INITIALIzE AND LOAD MODE REGISTER CLK CKS CKH CKE CMS CMH CMS CMH COMMAND NOP PRECHARGE DQM0-DQM3 A0-A9 ALL BANKS A10 SINGLE BANK BA0, BA1 ALL BANKS Power-up: V Precharge CC and CLK stable all banks T = 100µs Min. Notes High at clock High time, all commands applied are NOP. ...

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... IS42S32200E, IS45S32200E POWER-DOWN MODE CYCLE T0 CLK t t CKS CKH CKE t t CMS CMH COMMAND PRECHARGE DQM0-DQM3 A0-A9 ALL BANKS A10 SINGLE BANK BA0, BA1 BANK DQ High-Z Two clock cycles Precharge all All banks idle, enter active banks power-down mode CAS latency = 2, 3 Integrated Silicon Solution, Inc. — ...

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... IS42S32200E, IS45S32200E CLOCK SUSPEND MODE CLK CKS CKH CKS CKE t t CMS CMH COMMAND READ NOP t t CMS CMH DQM0-DQM3 A0-A9 (2) COLUMN A10 BA0, BA1 BANK DQ CAS latency = 2, burst length = CKH NOP NOP NOP m+1 OUT OUT Integrated Silicon Solution, Inc. — www.issi.com ...

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... IS42S32200E, IS45S32200E AUTO-REFRESH CYCLE CLK t t CKS CKH CKE t t CMS CMH PRECHARGE NOP COMMAND DQM0-DQM3 A0-A9 ALL BANKS A10 SINGLE BANK BA0, BA1 BANK ( High CAS latency = 2, 3 Integrated Silicon Solution, Inc. — www.issi.com Rev. D 07/12/2010 T2 Tn Auto Auto NOP ...

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... IS42S32200E, IS45S32200E SELF-REFRESH CYCLE CLK CKS CKH CKE t t CMS CMH COMMAND PRECHARGE NOP DQM0-DQM3 A0-A9 ALL BANKS A10 SINGLE BANK BA0, BA1 BANK DQ High Precharge all Enter self active banks refresh mode Note: 1. Self-Refresh Mode is not supported for A2 grade with T ...

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... IS42S32200E, IS45S32200E READ WITHOUT AUTO PRECHARGE CLK t t CKS CKH CKE t t CMS CMH ACTIVE NOP COMMAND t CMS DQM0-DQM3 A0-A9 ROW A10 ROW t t DISABLE AUTO PRECHARGE AS AH BA0, BA1 BANK DQ t RCD t RAS t RC CAS latency = 2, Burst Length = 4 Integrated Silicon Solution, Inc. — www.issi.com Rev ...

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... IS42S32200E, IS45S32200E READ WITH AUTO PRECHARGE CLK t t CKS CKH CKE t t CMS CMH ACTIVE NOP COMMAND t CMS DQM0-DQM3 A0-A9 ROW ENABLE AUTO PRECHARGE A10 ROW BA0, BA1 BANK DQ t RCD t RAS t RC CAS latency = 2, Burst Length = READ NOP NOP NOP ...

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... IS42S32200E, IS45S32200E SINGLE READ WITHOUT AUTO PRECHARGE CLK t t CKS CKH CKE t t CMS CMH ACTIVE NOP COMMAND DQM0-DQM3 A0-A9 ROW A10 ROW t t DISABLE AUTO PRECHARGE AS AH BA0, BA1 BANK DQ t RCD t RAS t RC CAS latency = 2, Burst Length = 1 Integrated Silicon Solution, Inc. — www.issi.com Rev ...

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... IS42S32200E, IS45S32200E SINGLE READ WITH AUTO PRECHARGE CLK t t CKS CKH CKE t t CMS CMH ACTIVE NOP COMMAND DQM0-DQM3 A0-A9, ROW A10 ROW BA0, BA1 BANK DQ t RCD t RAS t RC CAS latency = 2, Burst Length = NOP NOP READ NOP t t CMS CMH ...

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... IS42S32200E, IS45S32200E ALTERNATING BANK READ ACCESSES CLK t t CKS CKH CKE t t CMS CMH ACTIVE NOP COMMAND DQM0-DQM3 A0-A9 ROW ENABLE AUTO PRECHARGE A10 ROW BA0, BA1 BANK BANK 0 RCD t RRD t - BANK 0 RAS t - BANK 0 RC Integrated Silicon Solution, Inc. — www.issi.com Rev ...

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... IS42S32200E, IS45S32200E READ - FULL-PAGE BURST CLK CKS CKH CKE t t CMS CMH COMMAND ACTIVE NOP READ t CMS DQM0-DQM3 A0-A9, ROW COLUMN A10 ROW BA0, BA1 BANK BANK DQ t RCD NOP NOP NOP t CMH OUT OUT each row (x32) has CAS Latency ...

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... IS42S32200E, IS45S32200E READ - DQM OPERATION CLK t t CKS CKH CKE t t CMS CMH ACTIVE NOP COMMAND DQM0-DQM3 A0-A9 ROW ENABLE AUTO PRECHARGE A10 ROW DISABLE AUTO PRECHARGE BA0, BA1 BANK DQ t RCD CAS Latency = 2, Burst Length = 4 Integrated Silicon Solution, Inc. — www.issi.com Rev ...

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... IS42S32200E, IS45S32200E WRITE - WITHOUT AUTO PRECHARGE CLK t t CKS CKH CKE t t CMS CMH ACTIVE NOP COMMAND DQM0-DQM3 A0-A9 ROW A10 ROW t t DISABLE AUTO PRECHARGE AS AH BA0, BA1 BANK DQ t RCD t RAS t RC Burst Length = WRITE NOP NOP NOP t t CMS ...

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... IS42S32200E, IS45S32200E WRITE - WITH AUTO PRECHARGE CLK t t CKS CKH CKE t t CMS CMH ACTIVE NOP COMMAND t CMS DQM0-DQM3 A0-A9 ROW ENABLE AUTO PRECHARGE A10 ROW BA0, BA1 BANK RCD t RAS t RC Integrated Silicon Solution, Inc. — www.issi.com Rev. D 07/12/2010 T2 T3 ...

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... IS42S32200E, IS45S32200E SINGLE WRITE - WITHOUT AUTO PRECHARGE CLK t t CKS CKH CKE t t CMS CMH ACTIVE NOP COMMAND DQM0-DQM3 A0-A9 ROW A10 ROW t t DISABLE AUTO PRECHARGE AS AH BA0, BA1 BANK DQ t RCD t RAS WRITE NOP NOP PRECHARGE t t CMS CMH ...

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... IS42S32200E, IS45S32200E SINGLE WRITE - WITH AUTO PRECHARGE CLK t t CKS CKH CKE t t CMS CMH ACTIVE NOP COMMAND DQM0-DQM3 A0-A9 ROW A10 ROW BA0, BA1 BANK DQ t RCD t RAS t RC Integrated Silicon Solution, Inc. — www.issi.com Rev. D 07/12/2010 NOP NOP WRITE ...

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... IS42S32200E, IS45S32200E ALTERNATING BANK WRITE ACCESS CLK t t CKS CKH CKE t t CMS CMH ACTIVE NOP COMMAND t CMS DQM0-DQM3 A0-A9 ROW COLUMN ENABLE AUTO PRECHARGE A10 ROW BA0, BA1 BANK 0 BANK BANK 0 RCD t RRD t - BANK 0 RAS t - BANK WRITE NOP ACTIVE NOP ...

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... IS42S32200E, IS45S32200E WRITE - FULL PAGE BURST CLK t t CKS CKH CKE t t CMS CMH COMMAND ACTIVE NOP DQM0-DQM3 A0-A9 ROW A10 ROW BA0, BA1 BANK DQ t RCD Integrated Silicon Solution, Inc. — www.issi.com Rev. D 07/12/2010 WRITE NOP NOP t t CMS CMH ...

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... IS42S32200E, IS45S32200E WRITE - DQM OPERATION CLK t t CKS CKH CKE t t CMS CMH ACTIVE NOP COMMAND DQM0-DQM3 A0-A9 ROW A10 ROW BA0, BA1 BANK DQ t RCD WRITE NOP NOP t t CMS CMH COLUMN m ENABLE AUTO PRECHARGE DISABLE AUTO PRECHARGE BANK Integrated Silicon Solution, Inc. — www.issi.com ...

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... IS42S32200E, IS45S32200E ORDERING INFORMATION Commercial Range: 0°C to +70°C Frequency Speed (ns) 200 MHz 5 166 MHz 6 143 MHz 7 Industrial Range: -40°C to +85°C Frequency Speed (ns) 166 MHz 6 143 MHz 7 ORDERING INFORMATION Automotive Range: -40°C to +85°C Frequency Speed (ns) 166 MHz 6 143 MHz ...

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... IS42S32200E, IS45S32200E 58 Integrated Silicon Solution, Inc. — www.issi.com Rev. D 07/12/2010 ...

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... IS42S32200E, IS45S32200E Integrated Silicon Solution, Inc. — www.issi.com Rev. D 07/12/2010 D1 59 ...