IS42S32200E-6BLI-TR ISSI, Integrated Silicon Solution Inc, IS42S32200E-6BLI-TR Datasheet - Page 39

• Manufacturer Part Number: IS42S32200E-6BLI-TR
• Description: IC SDRAM 64MBIT 166MHZ 90BGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: SDRAMr

Specifications of IS42S32200E-6BLI-TR

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 64M (2Mx32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 3.15 V ~ 3.45 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 90-BGA
• Organization: 2Mx32
• Density: 64Mb
• Address Bus: 13b
• Access Time (max): 8/5.5ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 160mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS42S32200E, IS45S32200E
Integrated Silicon Solution, Inc. — www.issi.com
Rev. D
07/12/2010
POWER-DOWN MODE CYCLE
CAS latency = 2, 3
DQM0-DQM3
Precharge all
active banks
COMMAND
BA0, BA1
A0-A9
CKE
CLK
A10
DQ
High-Z
SINGLE BANK
t
t
ALL BANKS
CKS
PRECHARGE
CMS
t
AS
BANK
T0
All banks idle, enter
power-down mode
t
t
CKH
t
CMH
AH
Two clock cycles
t
CK
NOP
T1
t
t
CL
CKS
NOP
T2
t
CH
Input buffers gated
power-down mode
off while in
Exit power-down mode
t
CKS
Tn+1
NOP
All banks idle
ACTIVE
BANK
ROW
ROW
Tn+2
DON'T CARE
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