BCP53-10 T/R NXP Semiconductors, BCP53-10 T/R Datasheet - Page 10

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BCP53-10 T/R

Manufacturer Part Number
BCP53-10 T/R
Description
Transistors Bipolar - BJT TRANS MED PWR TAPE-7
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BCP53-10 T/R

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
100 V
Collector- Emitter Voltage Vceo Max
80 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
5 V
Gain Bandwidth Product Ft
145 MHz
Dc Collector/base Gain Hfe Min
63 at 5 mA at 2 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-223
Continuous Collector Current
1 A
Maximum Power Dissipation
1000 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
1000
Part # Aliases
BCP53-10,115
NXP Semiconductors
BCP53_BCX53_BC53PA
Product data sheet
Fig 10. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061;
Fig 11. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061;
Z
Z
(K/W)
(K/W)
th(j-a)
th(j-a)
10
10
10
10
10
10
10
10
–1
–1
1
1
3
2
3
2
10
10
FR4 PCB, single-sided copper, standard footprint
typical values
FR4 PCB, single-sided copper, mounting pad for collector 1 cm
typical values
–5
–5
0.25
0.25
duty cycle = 1
0
0.5
0.1
0.02
duty cycle = 1
0
0.5
0.1
0.02
0.75
0.33
0.05
0.01
0.75
0.33
0.05
0.01
0.2
0.2
10
10
–4
–4
10
10
–3
–3
All information provided in this document is subject to legal disclaimers.
10
10
–2
–2
Rev. 9 — 19 October 2011
10
10
–1
–1
BCP53; BCX53; BC53PA
2
1
1
80 V, 1 A PNP medium power transistors
10
10
10
10
2
2
© NXP B.V. 2011. All rights reserved.
t
t
p
p
006aac683
006aac684
(s)
(s)
10
10
3
3
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