BCP53-10 T/R NXP Semiconductors, BCP53-10 T/R Datasheet - Page 12

• Manufacturer Part Number: BCP53-10 T/R
• Description: Transistors Bipolar - BJT TRANS MED PWR TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of BCP53-10 T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 100 V
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 145 MHz
• Dc Collector/base Gain Hfe Min: 63 at 5 mA at 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-223
• Continuous Collector Current: 1 A
• Maximum Power Dissipation: 1000 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 1000
• Part # Aliases: BCP53-10,115

NXP Semiconductors
7. Characteristics
BCP53_BCX53_BC53PA
Product data sheet
Fig 14. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061;
Z
(K/W)
th(j-a)
10
10
10
10
–1
1
3
2
10
FR4 PCB, 4-layer copper, mounting pad for collector 1 cm
typical values
–5
0.25
0.1
duty cycle = 1
0.5
0
0.75
0.33
0.05
0.02
0.01
0.2
10
–4
Table 8.
T
[1]
Symbol
I
f
I
h
V
V
C
CBO
EBO
T
amb
FE
CEsat
BE
c
Pulse test: t
= 25
10

C unless otherwise specified.
–3
Parameter
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
DC current gain
collector-emitter
saturation voltage
base-emitter voltage
collector capacitance
transition frequency
Characteristics
h
h
p
FE
FE
 300 s;  = 0.02.
All information provided in this document is subject to legal disclaimers.
selection -10
selection -16
10
–2
Rev. 9 — 19 October 2011
10
Conditions
V
V
T
V
V
V
I
I
V
V
f = 1 MHz
V
f = 100 MHz
C
B
2
j
–1
CB
CB
EB
CE
CE
CE
CB
CE
= 150 C
I
I
I
I
I
= 500 mA;
= 50 mA
C
C
C
C
C
= 30 V; I
= 30 V; I
= 5 V; I
= 2 V
= 2 V
= 2 V; I
= 10 V; I
= 5 V; I
= 5 mA
= 150 mA
= 500 mA
= 150 mA
= 150 mA
BCP53; BCX53; BC53PA
C
C
C
1
E
E
E
= 0 A
= 500 mA
= 50 mA;
80 V, 1 A PNP medium power transistors
= i
= 0 A
= 0 A;
e
= 0 A;
10
[1]
[1]
[1]
Min
-
-
-
63
63
40
63
100
-
-
-
-
10
Typ
-
-
-
-
-
-
-
-
-
-
15
145
2
© NXP B.V. 2011. All rights reserved.
t
p
006aac687
(s)
250
160
250
-
Max
100
10
100
-
-
0.5
1
-
10
3
Unit
nA
A
nA
V
V
pF
MHz
12 of 22