BCX51-16 /T3 NXP Semiconductors, BCX51-16 /T3 Datasheet - Page 12

no-image

BCX51-16 /T3

Manufacturer Part Number
BCX51-16 /T3
Description
Transistors Bipolar - BJT TRANS MED PWR TAPE13
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BCX51-16 /T3

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
45 V
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
5 V
Gain Bandwidth Product Ft
145 MHz
Dc Collector/base Gain Hfe Min
100 at 150 mA at 2 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-89
Continuous Collector Current
1 A
Maximum Power Dissipation
1300 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
4000
Part # Aliases
BCX51-16,135
NXP Semiconductors
7. Characteristics
BCP51_BCX51_BC51PA
Product data sheet
Fig 14. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061;
Z
(K/W)
th(j-a)
10
10
10
10
–1
1
3
2
10
FR4 PCB, 4-layer copper, mounting pad for collector 1 cm
typical values
–5
0.25
0.1
duty cycle = 1
0.5
0
0.75
0.33
0.05
0.02
0.01
0.2
10
–4
Table 8.
T
[1]
Symbol
I
f
I
h
V
V
C
CBO
EBO
T
amb
FE
CEsat
BE
c
Pulse test: t
= 25
10
C unless otherwise specified.
–3
Parameter
collector-base
cut-off current
emitter-base
cut-off current
DC current gain
DC current gain
collector-emitter
saturation voltage
base-emitter voltage
collector capacitance
transition frequency
Characteristics
h
h
p
FE
FE
 300 s;  = 0.02.
All information provided in this document is subject to legal disclaimers.
selection -10
selection -16
10
–2
Rev. 9 — 13 October 2011
10
Conditions
V
V
T
V
V
V
I
I
V
V
f = 1 MHz
V
f = 100 MHz
C
B
2
j
–1
CB
CB
EB
CE
CE
CE
CB
CE
= 150 C
I
I
I
I
I
= 500 mA;
= 50 mA
C
C
C
C
C
= 30 V; I
= 30 V; I
= 5 V; I
= 2 V
= 2 V
= 2 V; I
= 10 V; I
= 5 V; I
= 5 mA
= 150 mA
= 500 mA
= 150 mA
= 150 mA
BCP51; BCX51; BC51PA
C
C
C
1
E
E
E
= 0 A
= 500 mA
= 50 mA;
45 V, 1 A PNP medium power transistors
= i
= 0 A
= 0 A;
e
= 0 A;
10
[1]
[1]
[1]
Min
-
-
-
63
63
40
63
100
-
-
-
-
10
Typ
-
-
-
-
-
-
-
-
-
-
15
145
2
© NXP B.V. 2011. All rights reserved.
t
p
006aac687
(s)
250
160
250
-
Max
100
10
100
-
-
0.5
1
-
10
3
Unit
nA
A
nA
V
V
pF
MHz
12 of 22

Related parts for BCX51-16 /T3