BCX51-16 /T3 NXP Semiconductors, BCX51-16 /T3 Datasheet - Page 19

• Manufacturer Part Number: BCX51-16 /T3
• Description: Transistors Bipolar - BJT TRANS MED PWR TAPE13
• Manufacturer: NXP Semiconductors

Specifications of BCX51-16 /T3

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 45 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 145 MHz
• Dc Collector/base Gain Hfe Min: 100 at 150 mA at 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-89
• Continuous Collector Current: 1 A
• Maximum Power Dissipation: 1300 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 4000
• Part # Aliases: BCX51-16,135

NXP Semiconductors
12. Revision history
Table 10.
BCP51_BCX51_BC51PA
Product data sheet
Document ID
BCP51_BCX51_BC51PA v.9
Modifications:
BC636_BCP51_BCX51 v.8
BC636_BCP51_BCX51 v.7
BC636_BCP51_BCX51 v.6
BC636_638_640 v.5
BCP51_52_53 v.5
BCX51_52_53 v.4
Revision history
Release date
20111013
20080222
20070629
20060329
20041011
20030206
20011010
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Deleted type number BC636
Added Type number BC51PA
Section 1 “Product
Table 6
Figure 1
Figure 10
Section 8 “Test
Section 11
Section 13 “Legal
All information provided in this document is subject to legal disclaimers.
and 7: updated according to latest measurements
to 9, 15, 17,
to 14: added
“Soldering”: added
Data sheet status
Product data sheet
Product data sheet
Product data sheet
Product data sheet
Product specification
Product specification
Product specification
Rev. 9 — 13 October 2011
information”: added
information”: updated
profile”: updated
18
and 21: updated
BCP51; BCX51; BC51PA
Change notice Supersedes
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45 V, 1 A PNP medium power transistors
BC636_BCP51_BCX51 v.8
BC636_BCP51_BCX51 v.7
BC636_BCP51_BCX51 v.6
BC636_638_640 v.5
BC636_638_640 v.4
BCP51_52_53 v.4
BCX51_52_53 v.3
BCP51_52_53 v.5
BCX51_52_53 v.4
© NXP B.V. 2011. All rights reserved.
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