MT46H16M16LFBF-6 AT:H TR Micron Technology Inc, MT46H16M16LFBF-6 AT:H TR Datasheet - Page 50
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MT46H16M16LFBF-6 AT:H TR
Manufacturer Part Number
MT46H16M16LFBF-6 AT:H TR
Description
IC DDR SDRAM 256MBIT 60VFBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT46H16M16LFBF-5H.pdf
(96 pages)
Specifications of MT46H16M16LFBF-6 AT:H TR
Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
256M (16Mx16)
Speed
166MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-40°C ~ 105°C
Package / Case
60-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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Burst Type
Table 18: Burst Definition Table
PDF: 09005aef834bf85b
256mb_mobile_ddr_sdram_t36n.pdf - Rev. H 11/09 EN
Length
Burst
16
2
4
8
A3
Starting Column Address
A2
A2
0
0
0
0
1
1
1
1
tions that can be accessed for a given READ or WRITE command. Burst lengths of 2, 4,
8, or 16 locations are available for both sequential and interleaved burst types.
When a READ or WRITE command is issued, a block of columns equal to the burst
length is effectively selected. All accesses for that burst take place within this block,
meaning that the burst will wrap when a boundary is reached. The block is uniquely
selected by A[i:1] when BL = 2, by A[i:2] when BL = 4, by A[i:3] when BL = 8, and by A[i:4]
when BL = 16, where Ai is the most significant column address bit for a given configura-
tion. The remaining (least significant) address bits are used to specify the starting
location within the block. The programmed burst length applies to both READ and
WRITE bursts.
Accesses within a given burst can be programmed to be either sequential or interleaved
via the standard mode register.
The ordering of accesses within a burst is determined by the burst length, the burst
type, and the starting column address.
A1
A1
A1
0
0
1
1
0
0
1
1
0
0
1
1
A0
A0
A0
A0
0
1
0
1
0
1
0
1
0
1
0
1
0
1
Type = Sequential
50
0-1-2-3-4-5-6-7
1-2-3-4-5-6-7-0
2-3-4-5-6-7-0-1
3-4-5-6-7-0-1-2
4-5-6-7-0-1-2-3
5-6-7-0-1-2-3-4
6-7-0-1-2-3-4-5
7-0-1-2-3-4-5-6
0-1-2-3
1-2-3-0
2-3-0-1
3-0-1-2
256Mb: x16, x32 Mobile LPDDR SDRAM
0-1
1-0
Order of Accesses Within a Burst
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Standard Mode Register
Type = Interleaved
©2008 Micron Technology, Inc. All rights reserved.
0-1-2-3-4-5-6-7
1-0-3-2-5-4-7-6
2-3-0-1-6-7-4-5
3-2-1-0-7-6-5-4
4-5-6-7-0-1-2-3
5-4-7-6-1-0-3-2
6-7-4-5-2-3-0-1
7-6-5-4-3-2-1-0
0-1-2-3
1-0-3-2
2-3-0-1
3-2-1-0
0-1
1-0
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