BC857BW /T3 NXP Semiconductors, BC857BW /T3 Datasheet - Page 3

• Manufacturer Part Number: BC857BW /T3
• Description: Transistors Bipolar - BJT TRANS GP TAPE-11
• Manufacturer: NXP Semiconductors

Specifications of BC857BW /T3

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 220 at 2 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-323
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 200 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 10000
• Part # Aliases: BC857BW,135

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
Note
1. Refer to SOT323 standard mounting conditions.
THERMAL CHARACTERISTICS
Note
1. Refer to SOT323 standard mounting conditions.
2002 Feb 04
V
V
V
I
I
I
P
T
T
T
R
C
CM
BM
stg
j
amb
CBO
CEO
EBO
tot
PNP general purpose transistors
th j-a
SYMBOL
SYMBOL
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
thermal resistance from junction to
ambient
BC856W
BC857W
BC858W
BC856W
BC857W
BC858W
PARAMETER
PARAMETER
open emitter
open base
open collector
T
in free air; note 1
amb
3
≤ 25 °C; note 1
CONDITIONS
CONDITIONS
BC856W; BC857W; BC858W
−
−
−
−
−
−
−
−
−
−
−
−65
−
−65
MIN.
VALUE
625
−80
−50
−30
−65
−45
−30
−5
−100
−200
−200
200
+150
150
+150
MAX.
Product data sheet
UNIT
K/W
V
V
V
V
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT