MJE13005 LEADFREE Central Semiconductor, MJE13005 LEADFREE Datasheet

MJE13005 LEADFREE

Manufacturer Part Number

MJE13005 LEADFREE

Description

Transistors Bipolar - BJT NPN Fast SW

Manufacturer

Central Semiconductor

Datasheet

1.MJE13005_LEADFREE.pdf (2 pages)

Specifications of MJE13005 LEADFREE

Product Category

Transistors Bipolar - BJT

Rohs

yes

Transistor Polarity

NPN

Collector- Base Voltage Vcbo

9 V

Collector- Emitter Voltage Vceo Max

400 V

Emitter- Base Voltage Vebo

9 V

Collector-emitter Saturation Voltage

400 V

Maximum Dc Collector Current

4 A

Gain Bandwidth Product Ft

4 MHz

Dc Collector/base Gain Hfe Min

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Package / Case

TO-220AB

Continuous Collector Current

4 A

Maximum Power Dissipation

75 W

Minimum Operating Temperature

- 65 C

Factory Pack Quantity

400

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DESCRIPTION

The CENTRAL SEMICONDUCTOR MJE13004 and MJE13005 are Silicon NPN Power Transistors, designed for high

speed power switching applications.

MAXIMUM RATINGS (T C =25°C unless otherwise noted)

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Peak Collector Current

Base Current

Peak Base Current

Power Dissipation (T A =25°C)

Power Dissipation

Operating and Storage

Junction Temperature

Thermal Resistance

ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise noted)

SYMBOL

I CEV

I EBO

BV CEO

V CE(SAT)

V BE(SAT)

h FE

TEST CONDITIONS

V CE =600V , V BE(OFF) =1.5V (MJE13004)

V CE =600V , V BE(OFF) =1.5V, T C =100°C (MJE13004)

V CE =700V , V BE(OFF) =1.5V (MJE13005)

V CE =700V , V BE(OFF) =1.5V, T C =100°C (MJE13005)

V EB =9.0V

I C =10mA (MJE13004)

I C =10mA (MJE13005)

I C =1.0A, I B =0.2A

I C =2.0A, I B =0.5A

I C =4.0A, I B =1.0A

I C =2.0A, I B =0.5A, T C =100°C

I C =1.0A, I B =0.2A

I C =2.0A, I B =0.5A

I C =2.0A, I B =0.5A, T C =100°C

V CE =5.0V, I C =1.0A

V CE =5.0V, I C =2.0A

SYMBOL

V CEO

V CEV

V EBO

I C

I CM

I B

I BM

P D

T J ,T stg

(SEE REVERSE SIDE)

MJE13004

300

600

MIN

300

400

8.0

-65 to +150

62.5

1.67

9.0

4.0

8.0

2.0

4.0

2.0

TYP

POWER TRANSISTOR

JEDEC TO-220 CASE

MJE13005

NPN SILICON

MAX

1.0

5.0

1.0

5.0

1.0

0.5

0.6

1.0

1.2

1.6

1.5

MJE13004

MJE13005

400

700

UNITS

DATA SHEET

UNITS

°C/W

°C

Related parts for MJE13005 LEADFREE

MJE13005 LEADFREE Summary of contents

Page 1

... DESCRIPTION The CENTRAL SEMICONDUCTOR MJE13004 and MJE13005 are Silicon NPN Power Transistors, designed for high speed power switching applications. MAXIMUM RATINGS (T C =25°C unless otherwise noted) Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Base Current Peak Base Current Power Dissipation (T A =25° ...

Page 2

MJE13004 / MJE13005 ELECTRICAL CHARACTERISTICS (CONTINUED) SYMBOL TEST CONDITIONS =10V =500mA, f=1.0MHz =10V =0, f=1.0kHz t V =125V =25µs, Duty Cycle r P ...

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