MT47H32M8BP-5E:B TR Micron Technology Inc, MT47H32M8BP-5E:B TR Datasheet - Page 22

• Manufacturer Part Number: MT47H32M8BP-5E:B TR
• Description: IC DDR2 SDRAM 256MBIT 5NS 60FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT47H32M8BP-5E:B TR

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 256M (32M x 8)
• Speed: 5ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 7: Thermal Impedance
PDF: 09005aef8117c187
256MbDDR2.pdf - Rev. M 7/09 EN
Die Revision Package Substrate
B
Last shrink
target
1
2
60-ball
84-ball
60-ball
84-ball
Notes:
2-layer
4-layer
2-layer
4-layer
2-layer
4-layer
2-layer
4-layer
1. Thermal resistance data is based on a number of samples from multiple lots and should
2. This is an estimate; simulated number and actual results could vary.
be viewed as a typical number.
Airflow = 0m/s
θ JA (°C/W)
59.0
37.8
53.6
36.6
65
45
55
40
Airflow = 1m/s
Electrical Specifications – Absolute Ratings
θ JA (°C/W)
22
46.7
32.5
40.0
29.9
48
38
45
35
Micron Technology, Inc. reserves the right to change products or specifications without notice.
256Mb: x4, x8, x16 DDR2 SDRAM
Airflow = 2m/s
θ JA (°C/W)
43.1
30.7
35.2
27.5
45
34
37
30
θ JB (°C/W)
©2003 Micron Technology, Inc. All rights reserved.
25.0
20.5
20.0
19.2
30
27
28
27
θ JC (°C/W)
4.4
5.2
5.0
6.0