IS42S32800D-75ETL-TR ISSI, Integrated Silicon Solution Inc, IS42S32800D-75ETL-TR Datasheet - Page 14

• Manufacturer Part Number: IS42S32800D-75ETL-TR
• Description: IC SDRAM 256MBIT 133MHZ 86TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: SDRAMr

Specifications of IS42S32800D-75ETL-TR

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 86-TSOPII
• Organization: 8Mx32
• Density: 256Mb
• Address Bus: 13b
• Access Time (max): 5.5ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 180mA
• Pin Count: 86
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DC RECOMMENDED OPERATING CONDITIONS
(T
Symbol
IS42S32800D, IS45S32800D
ABSOLUTE MAXIMUM RATINGS
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to
2. All voltages are referenced to Vss.
Note:
1. V
2. V
3. All voltages are referenced to Vss.
CAPACITANCE CHARACTERISTICS
14
a
Symbol
V
V
V
V
P
I
T
T
the device. This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
Symbol
C
C
C
= 0
cs
opr
ih
il
out
stg
dd max
ddq max
in
d max
in1
in2
i
/
V
V
o
V
V
(min) = -1.2V (
o
(max) = V
C to +70
ddq
ih
il
dd
(1)
(2)
o
ddq
C for Commercial grade. T
Parameter
Input Capacitance: CLK
Input Capacitance:All other input pins
Data Input/Output Capacitance:I/Os
Parameter
Supply Voltage
I/O Supply Voltage
Input High Voltage
Input Low Voltage
+1.2V (
Parameters
Maximum Supply Voltage
Maximum Supply Voltage for Output Buffer
Input Voltage
Output Voltage
Allowable Power Dissipation
output Shorted Current
operating Temperature
Storage Temperature
pulse width
pulse width
< 3
ns
).
< 3
a
ns
= -40
).
(1)
o
C to +85
(At T
a
= 0 to +25°C, V
o
C for Industrial and A1 grade. T
Com.
Ind.
A1
A2
Min.
-0.3
3.0
3.0
2.0
Min.
2.5
2.5
4.0
-1.0 to V
-0.5 to V
dd
Typ.
3.3
3.3
-0.5 to +4.6
-0.5 to +4.6
-40 to +105
-65 to +150
—
—
-40 to +85
-40 to +85
0 to +70
= V
Rating
50
1
ddq
ddq
dd
+ 0.5
+ 0.5
= 3.3 ± 0.3V)
V
ddq
a
Max.
+0.8
Integrated Silicon Solution, Inc. - www.issi.com
= -40
3.6
3.6
3.5
3.8
6.5
-6
+ 0.3
Max.
o
Unit
C to +105
mA
°C
°C
W
V
V
V
V
Unit
4.0
5.0
6.5
V
V
V
V
-7
o
C for A2 grade.)
Unit
pF
pF
pF
12/01/09
Rev. C