SMAJ530-E3/2G Vishay Semiconductors, SMAJ530-E3/2G Datasheet - Page 2

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SMAJ530-E3/2G

Manufacturer Part Number
SMAJ530-E3/2G
Description
TVS Diodes - Transient Voltage Suppressors 300W 530V 10% Uni
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of SMAJ530-E3/2G

Product Category
TVS Diodes - Transient Voltage Suppressors
Rohs
yes
Polarity
Unidirectional
Operating Voltage
477 V
Breakdown Voltage
530 V
Clamping Voltage
760 V
Peak Surge Current
0.4 A
Package / Case
DO-214AC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Channels
1 Channel
Dimensions
2.79(Max) mm W x 4.5(Max) mm L
Peak Pulse Power Dissipation
300 W
Factory Pack Quantity
1800
Tradename
TRANSZORB
Note
(1)
Note
(1)
Note
(1)
RATINGS AND CHARACTERISTICS CURVES (T
Revision: 12-Dec-12
ELECTRICAL CHARACTERISTICS (T
PARAMETER
Minimum breakdown voltage
Max. clamping voltage
Maximum DC reverse leakage current
Typical temperature coefficient
Typical capacitance
THERMAL CHARACTERISTICS (T
PARAMETER
Typical thermal resistance, junction to lead
Typical thermal resistance, junction to ambient
ORDERING INFORMATION (Example)
PREFERRED P/N
SMAJ530-E3/61
SMAJ530-E3/5A
SMAJ530HE3/61
SMAJ530HE3/5A
SMAJ530HE3_A/H
SMAJ530HE3_A/I
Measured at 1 MHz
Mounted on minimum recommended pad layout
AEC-Q101 qualified
100
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
0.1
10
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
1
0.1 µs
Fig. 1 - Peak Pulse Power Rating Curve
1.0 µs
www.vishay.com
(1)
(1)
(1)
(1)
(1)
t
d
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
10 µs
- Pulse Width (s)
UNIT WEIGHT (g)
0.064
0.064
0.064
0.064
0.064
0.064
Non-Repetitive Pulse
Waveform shown in Fig. 3
T
100 µs
A
= 25 °C
100 μA
400 mA, 10/1000 μs waveform
V
of V
0 V
200 V
1.0 ms
WM
BR
TEST CONDITIONS
A
PREFERRED PACKAGE CODE
(1)
= 25 °C unless otherwise noted)
A
10 ms
= 25 °C unless otherwise noted)
5A
5A
61
61
H
I
A
= 25 °C unless otherwise noted)
2
SYMBOL
R
R
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
JL
JA
SYMBOL
100
V
75
50
25
V
C
0
I
BR
D
C
J
0
BASE QUANTITY
www.vishay.com/doc?91000
Vishay General Semiconductor
25
SMAJ530
1800
7500
1800
7500
1800
7500
SMAJ530
50
T
J
530
- Initial Temperature (°C)
SMAJ530, SMAJ550
75
120
30
13" diameter plastic tape and reel
13" diameter plastic tape and reel
13" diameter plastic tape and reel
100
DiodesEurope@vishay.com
760
650
7" diameter plastic tape and reel
7" diameter plastic tape and reel
7" diameter plastic tape and reel
1.0
7.5
90
SMAJ550
SMAJ550
125
DELIVERY MODE
550
Document Number: 88391
150
175
200
°C/ W
UNIT
mV/°C
UNIT
μA
pF
V
V

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