MT47H64M16HR-25E L:G TR Micron Technology Inc, MT47H64M16HR-25E L:G TR Datasheet - Page 43
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MT47H64M16HR-25E L:G TR
Manufacturer Part Number
MT47H64M16HR-25E L:G TR
Description
IC DDR2 SDRAM 1GBIT 84FBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT47H256M4HQ-5EE_TR.pdf
(131 pages)
Specifications of MT47H64M16HR-25E L:G TR
Format - Memory
RAM
Memory Type
DDR2 SDRAM
Memory Size
1G (64M x 16)
Speed
2.5ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 85°C
Package / Case
84-FBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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- Download datasheet (10Mb)
Input Electrical Characteristics and Operating Conditions
Table 14: Input DC Logic Levels
All voltages are referenced to V
Table 15: Input AC Logic Levels
All voltages are referenced to V
Figure 12: Single-Ended Input Signal Levels
PDF: 09005aef821ae8bf
1GbDDR2.pdf – Rev. T 02/10 EN
Parameter
Input high (logic 1) voltage
Input low (logic 0) voltage
Parameter
Input high (logic 1) voltage (-37E/-5E)
Input high (logic 1) voltage (-187E/-25E/-25/-3E/-3)
Input low (logic 0) voltage (-37E/-5E)
Input low (logic 0) voltage (-187E/-25E/-25/-3E/-3)
Note:
Note:
Note:
1,150mV
1,025mV
936mV
918mV
900mV
882mV
864mV
775mV
650mV
1. V
1. Refer to AC Overshoot/Undershoot Specification (page 53).
1. Numbers in diagram reflect nominal DDR2-400/DDR2-533 values.
SS
SS
DDQ
Input Electrical Characteristics and Operating Conditions
+ 300mV allowed provided 1.9V is not exceeded.
Symbol
V
V
IH(DC)
IL(DC)
43
Symbol
V
V
V
V
V
IH(AC)
IH(AC)
IL(AC)
IL(AC)
Micron Technology, Inc. reserves the right to change products or specifications without notice.
REF(DC)
–300
Min
+ 125
1Gb: x4, x8, x16 DDR2 SDRAM
V
V
REF(DC)
REF(DC)
V
V
V
V
V
V
V
V
IH(AC)
IH(DC)
REF
REF
REF
REF
IL(DC)
IL(AC)
–300
–300
Min
+ AC noise
+ DC error
- DC error
- AC noise
+ 250
+ 200
V
REF(DC)
© 2004 Micron Technology, Inc. All rights reserved.
V
Max
DDQ
V
V
REF(DC)
REF(DC)
- 125
1
V
V
Max
DDQ
DDQ
- 250
- 200
1
1
Units
mV
mV
Units
mV
mV
mV
mV
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