M25PE10-VMN6TP NUMONYX, M25PE10-VMN6TP Datasheet - Page 24

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M25PE10-VMN6TP

Manufacturer Part Number
M25PE10-VMN6TP
Description
IC FLASH 1MBIT 75MHZ 8SOIC
Manufacturer
NUMONYX
Series
Forté™r
Datasheet

Specifications of M25PE10-VMN6TP

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
1M (128K x 8)
Speed
75MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
M25PE10-VMN6TP
M25PE10-VMN6TPTR

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Instructions
6.2
24/64
Write Disable (WRDI)
The Write Disable (WRDI) instruction
The Write Disable (WRDI) instruction is entered by driving Chip Select (S) Low, sending the
instruction code, and then driving Chip Select (S) High.
The Write Enable Latch (WEL) bit is reset under the following conditions:
Figure 9.
Power-up
Write Disable (WRDI) instruction completion
Page Write (PW) instruction completion
Page Program (PP) instruction completion
Write Status Register (WRSR) instruction completion
Write to Lock Register (WRLR) instruction completion
Page Erase (PE) instruction completion
SubSector Erase (SSE) instruction completion
Sector Erase (SE) instruction completion
Bulk Erase (BE) instruction completion
Write Disable (WRDI) instruction sequence
S
C
D
Q
High Impedance
0
(Figure
1
2
Instruction
3
9) resets the Write Enable Latch (WEL) bit.
4
5
6
7
AI03750D
M25PE20, M25PE10

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