M25PE10-VMN6TP NUMONYX, M25PE10-VMN6TP Datasheet - Page 54

• Manufacturer Part Number: M25PE10-VMN6TP
• Description: IC FLASH 1MBIT 75MHZ 8SOIC
• Manufacturer: NUMONYX
• Series: Forté™r

Specifications of M25PE10-VMN6TP

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 1M (128K x 8)
• Speed: 75MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: M25PE10-VMN6TP; M25PE10-VMN6TPTR

DC and AC parameters
Table 24.
1. See
2. Details of how to find the technology process in the marking are given in AN1995, see also
3. t
4. Value guaranteed by characterization, not 100% tested in production.
5. Only applicable as a constraint for a WRSR instruction when SRWD is set to ‘1’.
6. When using PP and PW instructions to update consecutive bytes, optimized timings are obtained with one sequence
7.
54/64
Symbol
t
t
t
WHSL
SHWL
t
SHQZ
t
t
t
t
t
t
t
t
t
t
t
t
RDP
t
t
CHDX
CHSH
SHCH
PW
DVCH
CLQV
CLQX
t
CH
SLCH
CHSL
SHSL
DP
PP
CL
information.
including all the bytes versus several sequences of only a few bytes (1 ≤ n ≤ 256).
t
t
SSE
t
int(A) corresponds to the upper integer part of A. E.g. int(12/8) = 2, int(32/8) = 4 int(15.3) =16.
t
CH
f
f
PE
SE
BE
W
C
R
(2)
(3)
(4)
(5)
(6)
(4)
(4)
+ t
(5)
(4)
Important note on page
CL
must be greater than or equal to 1/ f
t
t
t
t
t
Alt.
t
t
CLH
CSS
DSU
t
CSH
CLL
DIS
AC characteristics (75 MHz operation, T9HX (0.11 µm) process
f
DH
HO
t
C
V
Clock frequency for the following instructions:
FAST_READ, RDLR, PW, PP, WRLR, PE, SE, SSE,
DP, RDP, WREN, WRDI, RDSR, WRSR
Clock frequency for READ instructions
Clock High time
Clock Low time
Clock Slew Rate
S Active Setup time (relative to C)
S Not Active Hold time (relative to C)
Data In Setup time
Data In Hold time
S Active Hold time (relative to C)
S Not Active Setup time (relative to C)
S Deselect time
Output Disable time
Clock Low to Output Valid under 30 pF/10 pF
Output Hold time
Write Protect Setup time
Write Protect Hold time
S to Deep Power-down
S High to Standby mode
Write Status Register cycle time
Page Write cycle time (256 bytes)
Page Program cycle time (256 bytes)
Page Program cycle time (n bytes)
Page Erase cycle time
Sector Erase cycle time
SubSector Erase cycle time
Bulk Erase cycle time
6.
Test conditions specified in
2
(peak to peak)
Parameter
C
.
Table 16
and
Table 17
Min.
D.C.
D.C.
100
100
0.1
20
6
6
5
2
5
5
5
0
5
Section 13: Ordering
int(n/8) ×
0.025
Typ.
0.8
1.5
4.5
11
10
80
(1)
3
)
(7)
(2)
M25PE20, M25PE10
Max.
150
8/6
75
33
30
15
23
20
10
8
3
3
5
MHz
Unit
MHz
V/ns
ms
ms
ms
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
s
s