M25P40-VMP6G NUMONYX, M25P40-VMP6G Datasheet - Page 41
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M25P40-VMP6G
Manufacturer Part Number
M25P40-VMP6G
Description
IC FLASH 4MBIT 50MHZ 8VFQFPN
Manufacturer
NUMONYX
Series
Forté™r
Datasheet
1.M25P40-VMP6G.pdf
(61 pages)
Specifications of M25P40-VMP6G
Format - Memory
FLASH
Memory Type
FLASH
Memory Size
4M (512K x 8)
Speed
50MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-VFQFN, 8-VFQFPN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M25P40-VMP6G
Manufacturer:
ST
Quantity:
10 000
Part Number:
M25P40-VMP6G
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
M25P40-VMP6GB
Manufacturer:
MICRON
Quantity:
14 500
Table 17.
1. 150 nm technology devices are identified by process identification digit "X" in the device marking.
2. When using the Page Program (PP) instruction to program consecutive bytes, optimized timings are
Table 18.
1. Output Hi-Z is defined as the point where data out is no longer driven.
Figure 21. AC measurement I/O waveform
Symbol
Symbol
t
PP
obtained with one sequence including all the bytes versus several sequences of only a few bytes. (1 ≤ n ≤
256)
t
t
t
SE
BE
W
C
—
—
—
—
(2)
L
Load capacitance
Input rise and fall times
Input pulse voltages
Input timing reference voltages
Output timing reference voltages
Alt.
AC measurement conditions
Instruction times, process technology 150 nm
—
—
—
—
Write Status Register cycle time
Page Program cycle time (256 bytes)
Page Program cycle time (n bytes)
Sector Erase cycle time
Bulk Erase cycle time
0.8V CC
0.2V CC
Input Levels
Test conditions specified in
Parameter
Parameter
Table 10
Timing Reference Levels
Input and Output
and
Min.
Min.
0.2V
0.3V
—
—
—
—
—
—
Table 18
(1)
CC
CC
V
0.7V CC
0.5V CC
0.3V CC
AI07455
CC
0.4+n*1/
30
to 0.8V
to 0.7V
256
Typ.
/ 2
1.4
4.5
5
1
(2)
Max.
CC
CC
5
Max.
15
10
5
3
Unit
pF
ns
Unit
V
V
V
ms
ms
41/61
s
s