M25PE80-VMW6TG NUMONYX, M25PE80-VMW6TG Datasheet - Page 20

• Manufacturer Part Number: M25PE80-VMW6TG
• Description: IC FLASH 8MBIT 75MHZ 8SOIC
• Manufacturer: NUMONYX
• Series: Forté™r

Specifications of M25PE80-VMW6TG

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 8M (1M x 8)
• Speed: 75MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOIC (5.3mm Width), 8-SOP, 8-SOEIAJ
• Cell Type: NOR
• Density: 8Mb
• Access Time (max): 8ns
• Interface Type: Serial (SPI)
• Boot Type: Not Required
• Address Bus: 1b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: SOIC W
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Synchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 1M
• Supply Current: 8mA
• Mounting: Surface Mount
• Pin Count: 8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: M25PE80-VMW6TG; M25PE80-VMW6TGTR

Instructions
6
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Instructions
All instructions, addresses and data are shifted in and out of the device, most significant bit
first.
Serial data input (D) is sampled on the first rising edge of Serial Clock (C) after Chip Select
(S) is driven Low. Then, the one-byte instruction code must be shifted in to the device, most
significant bit first, on serial data input (D), each bit being latched on the rising edges of
Serial Clock (C).
The instruction set is listed in
Every instruction sequence starts with a one-byte instruction code. Depending on the
instruction, this might be followed by address bytes, or by data bytes, or by both or none.
In the case of a Read Data Bytes (READ), Read Data Bytes at Higher Speed (Fast_Read),
Read Identification (RDID), Read Status Register (RDSR), or Read Lock Register (RDLR)
instruction, the shifted-in instruction sequence is followed by a data-out sequence. Chip
Select (S) can be driven High after any bit of the data-out sequence is being shifted out.
In the case of a Page Write (PW), Page Program (PP), Write to Lock Register (WRLR),
Page Erase (PE), SubSector Erase (SSE), Sector Erase (SE), Bulk Erase (BE), Write
Enable (WREN), Write Disable (WRDI), Write Status Register (WRSR), Deep Power-down
(DP) or Release from Deep Power-down (RDP) instruction, Chip Select (S) must be driven
High exactly at a byte boundary, otherwise the instruction is rejected, and is not executed.
That is, Chip Select (S) must driven High when the number of clock pulses after Chip Select
(S) being driven Low is an exact multiple of eight.
All attempts to access the memory array during a write cycle, program cycle or erase cycle
are ignored, and the internal write cycle, program cycle or erase cycle continues unaffected.
Table
6.
M25PE80