M25P128-VME6TGB NUMONYX, M25P128-VME6TGB Datasheet - Page 33

• Manufacturer Part Number: M25P128-VME6TGB
• Description: IC FLASH 128MBIT 65NM 3V 8VDFPN
• Manufacturer: NUMONYX
• Series: Forté™r

Specifications of M25P128-VME6TGB

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 128M (16M x 8)
• Speed: 50MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-VDFPN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

8
Figure 18. Power-up timing
Table 8.
1. 65 nm technology devices are identified by the process identification digit ‘A’ in the device marking and
2. These parameters are characterized only.
Table 9.
1. These parameters are characterized only.
Initial delivery state
The device is delivered with the memory array erased: all bits are set to 1 (each byte
contains FFh). The Status Register contains 00h (all Status Register bits are 0).
Symbol
Symbol
V CC (max)
t
t
V CC (min)
t
t
PUW
PUW
VSL
VSL
V
process letter "B" in the part number.
V
WI
WI
(2)
(1)
(2)
(2)
V WI
V CC
V
Time delay to Write instruction
Write Inhibit Voltage
V
Time delay to Write instruction
Write Inhibit Voltage
CC
CC
Reset State
Power-up timing and V
Power-up timing and V
Device
(min) to S Low
(min) to S Low
of the
Program, Erase and Write Commands are Rejected by the Device
Chip Selection Not Allowed
Parameter
Parameter
WI
WI
threshold for 65 nm devices
threshold for 130 nm devices
tPUW
tVSL
Read Access allowed
Min.
Min.
200
400
1.5
1.5
60
(1)
1
Device fully
accessible
Max.
Max.
2.5
10
2.5
time
AI04009C
Unit
Unit
ms
33/47
µs
µs
µs
V
V