M25P128-VME6TGB NUMONYX, M25P128-VME6TGB Datasheet - Page 37

no-image

M25P128-VME6TGB

Manufacturer Part Number
M25P128-VME6TGB
Description
IC FLASH 128MBIT 65NM 3V 8VDFPN
Manufacturer
NUMONYX
Series
Forté™r
Datasheet

Specifications of M25P128-VME6TGB

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
128M (16M x 8)
Speed
50MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-VDFPN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M25P128-VME6TGB
Manufacturer:
BOURNS
Quantity:
550 000
Part Number:
M25P128-VME6TGB
Manufacturer:
NUMONYX
Quantity:
8 000
Part Number:
M25P128-VME6TGB
Manufacturer:
ST
0
Part Number:
M25P128-VME6TGB
Manufacturer:
ST
Quantity:
20 000
Table 15.
1. 65 nm process technology devices are identified by the process identification digit ‘A’ in the device marking
2. t
3. Value is guaranteed by characterization, not 100% tested in production.
4. Expressed as a slew-rate.
5. Only applicable as a constraint for WRSR instruction when SRWD is set to 1.
6. V
t
VPPHSL
t
Symbol
t
t
t
t
SHWL
HHQX
WHSL
SHQZ
HLQZ
t
t
t
t
t
t
t
t
t
t
and process letter "B" in the part number.
(success or failure) is known.
t
t
DVCH
CHDX
CHSH
SHCH
CHHH
HHCH
CH
CLQV
CLQX
HLCH
CHHL
SHSL
PP
t
t
t
t
PPH
(6)
t
SE
SE
BE
BE
W
(7)
and t
(3)
(2)
(3)
(5)
(5)
should be kept at a valid level until the program or erase operation has completed and its result
(3)
CL
must be greater than or equal to 1/f
AC characteristics for 65 nm devices
t
t
Alt.
t
t
DSU
t
CSH
t
t
DIS
DH
HO
t
HZ
LZ
V
Data In Setup Time
Data In Hold Time
S Active Hold Time (relative to C)
S Not Active Setup Time (relative to C)
S Deselect Time
Output Disable Time
Clock Low to Output Valid
Output Hold Time
HOLD Setup Time (relative to C)
HOLD Hold Time (relative to C)
HOLD Setup Time (relative to C)
HOLD Hold Time (relative to C)
HOLD to Output Low-Z
HOLD to Output High-Z
Write Protect Setup Time
Write Protect Hold Time
Enhanced Program Supply Voltage
High to Chip Select Low
Write Status Register Cycle Time
Page Program Cycle Time (256 Bytes)
Page Program Cycle Time (n Bytes)
Page Program Cycle Time (V
V
Sector Erase Cycle Time
Sector Erase Cycle Time (V
Bulk Erase Cycle Time
Bulk Erase Cycle Time (V
PPH
Test conditions specified in
) (256 Bytes)
Parameter
C
(max).
PP
PP
= V
PP
= V
Table 11
PPH
=
PPH
)
(1)
)
(continued)
and
Min.
100
200
50
20
2
3
4
4
1
4
4
4
4
Table 12
int(n/8) x
0.015
0.4
Typ.
130
120
1.3
0.5
1.6
1.6
(3)
(8)
Max.
250
250
15
8
8
8
8
5
3
3
Unit
ms
37/47
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
s
s
s
s
s

Related parts for M25P128-VME6TGB