M29W320ET70N6E NUMONYX, M29W320ET70N6E Datasheet - Page 51

• Manufacturer Part Number: M29W320ET70N6E
• Description: IC FLASH 32MBIT 70NS 48TSOP
• Manufacturer: NUMONYX
• Series: Axcell™r

Specifications of M29W320ET70N6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nor
• Memory Size: 32M (4Mx8, 2Mx16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Access Time: 70ns
• Base Number: 29
• Ic Generic Number: 29W320
• Memory Configuration: 4M X 8, 2M X 16
• Interface Type: CFI, Parallel
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3608; 497-3608

M29W320ET, M29W320EB
Table 24.
1Bh
1Ch
1Dh
1Eh
x16
1Fh
20h
21h
22h
23h
24h
25h
26h
Address
CFI Query System Interface Information
3Ah
3Ch
3Eh
4Ah
4Ch
36h
38h
40h
42h
44h
46h
48h
x8
00B5h
00C5h
000Ah
0027h
0036h
0004h
0000h
0000h
0004h
0000h
0003h
0000h
Data
V
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
V
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
V
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
V
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
Typical timeout per single byte/word program = 2
Typical timeout for minimum size write buffer program = 2
Typical timeout per individual block erase = 2
Typical timeout for full Chip Erase = 2
Maximum timeout for byte/word program = 2
Maximum timeout per individual block erase = 2
Maximum timeout for Chip Erase = 2
Maximum timeout for write buffer program = 2
CC
CC
PP
PP
[Programming] Supply Minimum Program/Erase voltage
[Programming] Supply Maximum Program/Erase voltage
Logic Supply Minimum Program/Erase voltage
Logic Supply Maximum Program/Erase voltage
Description
n
n
times typical
ms
n
n
Common Flash Interface (CFI)
n
times typical
ms
times typical
n
n
times typical
µs
n
µs
256 µs
Value
11.5V
12.5V
16µs
2.7V
3.6V
NA
NA
NA
8 s
NA
1s
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