N25Q128A11B1241F NUMONYX, N25Q128A11B1241F Datasheet - Page 128
N25Q128A11B1241F
Manufacturer Part Number
N25Q128A11B1241F
Description
IC SRL FLASH 128MB NMX 24-BGAS
Manufacturer
NUMONYX
Series
Forté™r
Datasheet
1.N25Q128A11B1240F.pdf
(185 pages)
Specifications of N25Q128A11B1241F
Format - Memory
FLASH
Memory Type
FLASH
Memory Size
128M (16M x 8)
Speed
108MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
1.7 V ~ 2 V
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
N25Q128A11B1241F
Manufacturer:
Micron Technology Inc
Quantity:
10 000
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9.2.21
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Write NV Configuration Register
The Write Non Volatile Configuration register (WRNVCR) instruction allows new values to
be written to the Non Volatile Configuration register. Before it can be accepted, a write
enable (WREN) instruction must previously have been executed.
Apart form the parallelizing of the instruction code and the input data on the two pins DQ0
and DQ1, the instruction functionality is exactly the same as the Write Non Volatile
Configuration Register (WNVCR) instruction of the Extended SPI protocol, please refer to
Section 9.1.29: Write NV Configuration Register
Figure 65. Write NV Configuration Register instruction sequence DIO-SPI
Read Volatile Configuration Register
The Read Volatile Configuration Register (RDVCR) instruction allows the Volatile
Configuration Register to be read. See
DQ0
DQ1
C
S
0
Instruction
1
2
3
7
6
Table 6.: Volatile Configuration
4
LS Byte
5
4
5
Byte
3
2
6
for further details.
NVCR In
1
0
7
15 13 11 9
14 12 10 8
8
MS Byte
9 10 11
Byte
Dual_Write_NVCR
Register.
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