M29W128GH70N6E NUMONYX, M29W128GH70N6E Datasheet - Page 55
M29W128GH70N6E
Manufacturer Part Number
M29W128GH70N6E
Description
IC FLASH 128MBIT 70NS 56TSOP
Manufacturer
NUMONYX
Series
Axcell™r
Datasheet
1.M29W128GH70N6E.pdf
(94 pages)
Specifications of M29W128GH70N6E
Format - Memory
FLASH
Memory Type
FLASH
Memory Size
128M (16Mx8, 8Mx16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
56-TSOP
Package
56TSOP
Cell Type
NOR
Density
128 Mb
Architecture
Sectored
Block Organization
Symmetrical
Typical Operating Supply Voltage
3|3.3 V
Sector Size
128KByte x 128
Timing Type
Asynchronous
Interface Type
Parallel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M29W128GH70N6E
Manufacturer:
Numonyx
Quantity:
17 280
Company:
Part Number:
M29W128GH70N6E
Manufacturer:
MICRON
Quantity:
595
Company:
Part Number:
M29W128GH70N6E
Manufacturer:
MICRON45
Quantity:
556
Part Number:
M29W128GH70N6E
Manufacturer:
ST
Quantity:
20 000
Table 20.
1. Unspecified data bits should be ignored.
2.
Program
Program during erase suspend
Buffered program abort
Program error
Chip erase
Block erase before timeout
Block erase
Erase suspend
Erase error
DQ7
loaded.
for write to buffer program and enhanced buffered program is related to the last address location
(2)
Operation
Status register bits
(2)
Erasing block
Erasing block
Erasing block
Any address
Any address
Any address
Any address
Any address
Non-erasing
Non-erasing
Non-erasing
Faulty block
Good block
(1)
Address
address
address
block
block
block
DQ7
DQ7
DQ7
DQ7
DQ7
0
0
0
0
0
1
0
0
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Data read as normal
DQ6
No
DQ5 DQ3
0
0
0
1
0
0
0
0
0
0
1
1
–
–
–
–
1
0
0
1
1
–
1
1
Toggle
Toggle
Toggle
Toggle
Toggle
toggle
toggle
toggle
DQ2
No
No
No
–
–
–
–
DQ1
0
–
1
–
–
–
–
–
–
–
–
–
–
55/94
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
RB
0
0
0
0
0
0
0
0