M48Z512AV-85PM1 STMicroelectronics, M48Z512AV-85PM1 Datasheet - Page 16

• Manufacturer Part Number: M48Z512AV-85PM1
• Description: IC NVSRAM 4MBIT 85NS 32DIP
• Manufacturer: STMicroelectronics

Specifications of M48Z512AV-85PM1

• Format - Memory: RAM
• Memory Type: NVSRAM (Non-Volatile SRAM)
• Memory Size: 4M (512K x 8)
• Speed: 85ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 32-DIP (600 mil) Module
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8550-5

DC and AC parameters
16/21
Table 9.
1. Valid for ambient operating temperature: T
2. V
3. V
Table 10.
1. All voltages referenced to V
2. Valid for ambient operating temperature: T
3. At 25 °C; V
Symbol
Symbol
t
V
DR
V
t
or 3.0 to 3.6 V (except where noted).
until 200 µs after V
or 3.0 to 3.6 V (except where noted).
t
t
FB
PFD
t
WPT
t
F
SO
PFD
PFD
t
RB
ER
R
(3)
(2)
(3)
(max) to V
(min) to V
Power-fail deselect voltage
Battery backup switchover voltage
Expected data retention time
V
V
V
V
WRITE protect time
E recovery time
CC
Power down/up AC characteristics
Power down/up trip points DC characteristics
PFD
PFD
PFD
SS
= 0 V.
SS
to V
PFD
(max) to V
(min) to V
(min) to V
fall time of less than t
CC
PFD
(min) fall time of less than t
passes V
(min) V
SS
SS
PFD
PFD
Parameter
.
PFD
V
(max) V
CC
CC
Parameter
(min) V
Doc ID 5146 Rev 8
(min).
rise time
fall time
FB
CC
CC
(1)(2)
A
A
may cause corruption of RAM data.
= 0 to 70 °C or –40 to 85 °C; V
= 0 to 70 °C or –40 to 85 °C; V
rise time
fall time
(1)
F
may result in deselection/WRITE protection not occurring
M48Z512A/Y
M48Z512AY
M48Z512AV
M48Z512AV
M48Z512A
M48Z512A/Y
M48Z512A/Y
M48Z512AV
M48Z512AV
M48Z512A, M48Z512AY, M48Z512AV
Min
4.5
4.2
2.8
10
CC
CC
Min
300
150
10
10
40
40
40
1
= 4.75 to 5.5 V, 4.5 to 5.5 V,
= 4.75 to 5.5 V, 4.5 to 5.5 V,
Typ
4.6
4.3
2.9
3.0
2.5
Max
150
250
120
Max
4.75
4.5
3.0
Unit
Years
ms
µs
µs
µs
µs
µs
Unit
V
V
V
V
V