SST25VF512-20-4C-QAE Microchip Technology, SST25VF512-20-4C-QAE Datasheet - Page 13
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SST25VF512-20-4C-QAE
Manufacturer Part Number
SST25VF512-20-4C-QAE
Description
IC FLASH SER 512K 20MHZ 8WSON
Manufacturer
Microchip Technology
Specifications of SST25VF512-20-4C-QAE
Format - Memory
FLASH
Memory Type
FLASH
Memory Size
512K (64K x 8)
Speed
20MHz
Interface
SPI Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
8-WSON
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
512 Kbit SPI Serial Flash
SST25VF512
Write-Status-Register (WRSR)
The Write-Status-Register instruction works in conjunction
with the Enable-Write-Status-Register (EWSR) instruction
to write new values to the BP1, BP0, and BPL bits of the
status register. The Write-Status-Register instruction must
be executed immediately after the execution of the Enable-
Write-Status-Register instruction (very next instruction bus
cycle). This two-step instruction sequence of the EWSR
instruction followed by the WRSR instruction works like
SDP (software data protection) command structure which
prevents any accidental alteration of the status register val-
ues. The Write-Status-Register instruction will be ignored
when WP# is low and BPL bit is set to “1”. When the WP#
is low, the BPL bit can only be set from “0” to “1” to lock-
down the status register, but cannot be reset from “1” to “0”.
©2005 Silicon Storage Technology, Inc.
FIGURE 13: E
SCK
CE#
SO
SI
MODE 3
MODE 0
NABLE
-W
0 1 2 3 4 5 6 7
MSB
RITE
-S
TATUS
50
-R
EGISTER
(EWSR)
HIGH IMPEDANCE
MODE 3
MODE 0
13
MSB
AND
When WP# is high, the lock-down function of the BPL bit is
disabled and the BPL, BP0, and BP1 bits in the status reg-
ister can all be changed. As long as BPL bit is set to 0 or
WP# pin is driven high (V
tion of the CE# pin at the end of the WRSR instruction, the
BP0, BP1, and BPL bit in the status register can all be
altered by the WRSR instruction. In this case, a single
WRSR instruction can set the BPL bit to “1” to lock down
the status register as well as altering the BP0 and BP1 bit
at the same time. See Table 3 for a summary description of
WP# and BPL functions. CE# must be driven low before
the command sequence of the WRSR instruction is
entered and driven high before the WRSR instruction is
executed. See Figure 13 for EWSR and WRSR instruction
sequences.
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
W
RITE
01
-S
TATUS
MSB
7 6 5 4 3 2 1 0
-R
REGISTER IN
EGISTER
STATUS
IH
) prior to the low-to-high transi-
(WRSR) S
S71192-09-000
1192 F38.9
EQUENCE
Data Sheet
1/06