AT49BV322A-70TI Atmel, AT49BV322A-70TI Datasheet - Page 4

• Manufacturer Part Number: AT49BV322A-70TI
• Description: IC FLASH 32MBIT 70NS 48TSOP
• Manufacturer: Atmel

Specifications of AT49BV322A-70TI

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 32M (4Mx8, 2Mx16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 2.65 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

3. Block Diagram
4. Device Operation
4.1
4.2
4
A0 - A20
Read
Command Sequences
AT49BV322A(T)
Y-DECODER
X-DECODER
ADDRESS
BUFFER
LATCH
INPUT
The AT49BV322A(T) is accessed like an EPROM. When CE and OE are low and WE is high,
the data stored at the memory location determined by the address pins are asserted on the out-
puts. The outputs are put in the high impedance state whenever CE or OE is high. This dual-line
control gives designers flexibility in preventing bus contention.
When the device is first powered on, it will be reset to the read or standby mode, depending
upon the state of the control line inputs. In order to perform other device functions, a series of
command sequences are entered into the device. The command sequences are shown in the
“Command Definition Table” on page 13
codes). The command sequences are written by applying a low pulse on the WE or CE input
with CE or WE low (respectively) and OE high. The address is latched on the falling edge of CE
or WE, whichever occurs last. The data is latched by the first rising edge of CE or WE. Standard
OUTPUT
BUFFER
COMPARATOR
I/O0 - I/O15/A-1
MEMORY
IDENTIFIER
REGISTER
REGISTER
Y-GATING
STATUS
MAIN
DATA
BUFFER
INPUT
(I/O8 - I/O15 are don’t care inputs for the command
WRITE STATE
COMMAND
REGISTER
MACHINE
PROGRAM/ERASE
VOLTAGE SWITCH
3308J–FLASH–4/05
CE
WE
OE
RESET
BYTE
RDY/BUSY
VPP
VCC
GND