AT45DB161D-TU Atmel, AT45DB161D-TU Datasheet - Page 24
![IC FLASH 16MBIT 66MHZ 28TSOP](/photos/7/21/72191/313-28-tsop_sml.jpg)
AT45DB161D-TU
Manufacturer Part Number
AT45DB161D-TU
Description
IC FLASH 16MBIT 66MHZ 28TSOP
Manufacturer
Atmel
Specifications of AT45DB161D-TU
Format - Memory
FLASH
Memory Type
DataFLASH
Memory Size
16M (4096 pages x 528 bytes)
Speed
66MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
28-TSOP
Memory Configuration
4096 Pages X 528 Bytes
Interface Type
Serial, SPI
Clock Frequency
66MHz
Supply Voltage Range
2.5V To 3.6V, 2.7V To 3.6V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
AT45DB161D-TU
Manufacturer:
ATMEL
Quantity:
5 510
Company:
Part Number:
AT45DB161D-TU
Manufacturer:
ATMEL
Quantity:
14
Part Number:
AT45DB161D-TU
Manufacturer:
ATMEL/爱特梅尔
Quantity:
20 000
14.2
24
Operation Mode Summary
The commands described previously can be grouped into four different categories to better describe which
commands can be executed at what times.
Group A commands consist of:
Group B commands consist of:
Group C commands consist of:
Group D commands consist of:
If a Group A command is in progress (not fully completed), then another command in Group A, B, C, or D should
not be started. However, during the internally self-timed portion of Group B commands, any command in Group C
can be executed. The Group B commands using buffer 1 should use Group C commands using buffer 2 and vice
versa. Finally, during the internally self-timed portion of a Group D command, only the Status Register Read
command should be executed.
1. Main Memory Page Read
2. Continuous Array Read
3. Read Sector Protection Register
4. Read Sector Lockdown Register
5. Read Security Register
1. Page Erase
2. Block Erase
3. Sector Erase
4. Chip Erase
5. Main Memory Page to Buffer 1 (or 2) Transfer
6. Main Memory Page to Buffer 1 (or 2) Compare
7. Buffer 1 (or 2) to Main Memory Page Program with Built-in Erase
8. Buffer 1 (or 2) to Main Memory Page Program without Built-in Erase
9. Main Memory Page Program through Buffer 1 (or 2)
10. Auto Page Rewrite
1. Buffer 1 (or 2) Read
2. Buffer 1 (or 2) Write
3. Status Register Read
4. Manufacturer and Device ID Read
1. Erase Sector Protection Register
2. Program Sector Protection Register
3. Sector Lockdown
4. Program Security Register
Atmel AT45DB161D
3500N–DFLASH–05/10