MT45W8MW16BGX-708 WT TR Micron Technology Inc, MT45W8MW16BGX-708 WT TR Datasheet - Page 60

• Manufacturer Part Number: MT45W8MW16BGX-708 WT TR
• Description: IC PSRAM 128MBIT 70NS 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W8MW16BGX-708 WT TR

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 128M (8Mx16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1010-2

NOTE:
Table 50: Burst READ Timing Parameters
Table 51: Asynchronous WRITE Timing Parameters Using ADV#
09005aef80ec6f79 pdf/09005aef80ec6f65 zip
Burst CellularRAM 1.5_128Mb__2.fm - Rev. D 2/05 EN
SYMBOL
SYMBOL
t
t
t
t
t
t
t
t
t
t
t
t
t
t
DQ[15:0]
ACLK
BOE
CBPH
CEW
CLK
CSP
AS
AVH
AVS
AW
BW
CEW
CW
DH
1. Non-default BCR settings for burst READ followed by asynchronous WRITE using ADV#: Fixed or variable latency; latency code two (three
2. When transitioning between asynchronous and variable-latency burst operations, CE# must go HIGH. CE# can stay LOW when transitioning from
LB#/UB#
A[22:0]
clocks); WAIT active LOW; WAIT asserted during delay.
fixed-latency burst READs; asynchronous operation begins at the falling edge of ADV#. A refresh opportunity must be provided every
A refresh opportunity is satisfied by either of the following two conditions: a) clocked CE# HIGH, or b) CE# HIGH for longer than 15ns.
ADV#
WAIT
WE#
OE#
CLK
CE#
Figure 53: Burst READ Followed by Asynchronous WRITE Using ADV#
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
MIN
9.62
IL
IL
IH
IL
IH
IL
IH
IL
IH
IL
IH
OL
IH
IH
IL
OH
OL
OH
5
1
3
MIN
70
70
70
0
2
5
1
0
-701
-701/-708
MAX
7.5
20
7
READ Burst Identified
t
ADDRESS
t
SP
MAX
CSP
t
VALID
(WE# = HIGH)
t
SP
7.5
t
SP
t
SP
CEW
MIN
12.5
6
1
4
t
-708
HD
t
HD
t
HD
MAX
High-Z
7.5
20
9
MIN
85
85
85
0
2
5
1
0
-856
MIN
15
8
1
5
ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY
-856
MAX
7.5
MAX
7.5
11
20
t
OLZ
t
BOE
t
ACLK
UNITS
UNITS
t
VPH
t
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
KHTL
t
CLK
OUTPUT
60
VALID
t
SYMBOL
t
t
t
t
t
t
t
HD
SYMBOL
t
t
t
t
t
t
t
t
DW
HZ
VP
VPH
VS
WP
WPH
HD
HZ
KHTL
KOH
OHZ
SP
KOH
HD
t
OHZ
t
HZ
Micron Technology, Inc., reserves the right to change products or specifications without notice.
NOTE 2
t
CBPH
High-Z
MIN
2
2
3
MIN
20
10
70
45
10
5
t
CEW
-701
t
AS
-701/-708
t
AS
V
V
MAX
IL
IH
t
8
7
8
t
VP
ADDRESS
AVS
VALID
MAX
8
MIN
2
2
3
t
AVH
t
t
-708
CW
BW
t
AW
©2004 Micron Technology, Inc. All rights reserved.
t
WP
DON’T CARE
MAX
t
VS
8
9
8
MIN
20
10
85
55
10
8 MEG x 16
7
MIN
-856
t
VALID
INPUT
2
2
3
DW
t
HZ
-856
MAX
8
MAX
UNDEFINED
11
8
8
t
WPH
t
DH
t
CEM.
UNITS
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns