MT47H16M16BG-37E:B TR Micron Technology Inc, MT47H16M16BG-37E:B TR Datasheet - Page 110
![IC DDR2 SDRAM 256MBIT 84FBGA](/photos/7/23/72318/mfg557-84-fbga_sml.jpg)
MT47H16M16BG-37E:B TR
Manufacturer Part Number
MT47H16M16BG-37E:B TR
Description
IC DDR2 SDRAM 256MBIT 84FBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT47H16M16BG-3B_TR.pdf
(128 pages)
Specifications of MT47H16M16BG-37E:B TR
Format - Memory
RAM
Memory Type
DDR2 SDRAM
Memory Size
256M (16Mx16)
Speed
3.75ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 85°C
Package / Case
84-FBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1045-1
MT47H16M16BG-37E:B
MT47H16M16BG-37E:B
- Current page: 110 of 128
- Download datasheet (10Mb)
SELF REFRESH
PDF: 09005aef8117c187
256MbDDR2.pdf - Rev. M 7/09 EN
The SELF REFRESH command is initiated when CKE is LOW. The differential clock
should remain stable and meet
refresh mode. The procedure for exiting self refresh requires a sequence of commands.
First, the differential clock must be stable and meet
prior to CKE going back to HIGH. Once CKE is HIGH (
with three clock registrations), the DDR2 SDRAM must have NOP or DESELECT com-
mands issued for
ments is used to apply NOP or DESELECT commands for 200 clock cycles before
applying any other command.
t
XSNR. A simple algorithm for meeting both refresh and DLL require-
110
t
CKE specifications at least 1 ×
Micron Technology, Inc. reserves the right to change products or specifications without notice.
256Mb: x4, x8, x16 DDR2 SDRAM
t
CK specifications at least 1 ×
t
CKE [MIN] has been satisfied
©2003 Micron Technology, Inc. All rights reserved.
t
CK after entering self
SELF REFRESH
t
CK
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