MT47H16M16BG-37E:B TR Micron Technology Inc, MT47H16M16BG-37E:B TR Datasheet - Page 114

• Manufacturer Part Number: MT47H16M16BG-37E:B TR
• Description: IC DDR2 SDRAM 256MBIT 84FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT47H16M16BG-37E:B TR

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 3.75ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 84-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1045-1; MT47H16M16BG-37E:B

Table 43: Truth Table – CKE
Notes 1–4 apply to the entire table
PDF: 09005aef8117c187
256MbDDR2.pdf - Rev. M 7/09 EN
Current State
Bank(s) active
All banks idle
Power-down
Self refresh
Previous Cycle
Notes:
(n - 1)
H
H
H
H
L
L
L
L
10. Valid commands for self refresh exit are NOP and DESELECT only.
11. Power-down and self refresh can not be entered while READ or WRITE operations,
12. Minimum CKE high time is
13. Self refresh mode can only be entered from the all banks idle state.
14. Must be a legal command, as defined in Table 36 (page 64).
1. CKE (n) is the logic state of CKE at clock edge n; CKE (n - 1) was the state of CKE at the
2. Current state is the state of the DDR2 SDRAM immediately prior to clock edge n.
3. Command (n) is the command registered at clock edge n, and action (n) is a result of
4. The state of ODT does not affect the states described in this table. The ODT function is
5. Power-down modes do not perform any REFRESH operations. The duration of power-
6. “X” means “Don’t Care” (including floating around V
7. All states and sequences not shown are illegal or reserved unless explicitly described else-
8. Valid commands for power-down entry and exit are NOP and DESELECT only.
9. On self refresh exit, DESELECT or NOP commands must be issued on every clock edge
previous clock edge.
command (n).
not available during self refresh (see ODT Timing (page 122) for more details and specif-
ic restrictions).
down mode is therefore limited by the refresh requirements.
down. However, ODT must be driven high or low in power-down if the ODT function is
enabled via EMR.
where in this document.
occurring during the
(200 clocks) is satisfied.
LOAD MODE operations, or PRECHARGE operations are in progress. See SELF REFRESH
(page 110) and SELF REFRESH (page 70) for a list of detailed restrictions.
This requires a minimum of 3 clock cycles of registration.
CKE
Cycle (n)
Current
H
H
H
L
L
L
L
L
t
XSNR period. READ commands may be issued only after
CS#, RAS#, CAS#,
114
DESELECT or NOP
DESELECT or NOP
DESELECT or NOP Active power-down entry
DESELECT or NOP
Command (n)
t
CKE = 3 ×
Refresh
WE#
Shown in Table 36 (page 64)
X
X
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
CK. Minimum CKE LOW time is
256Mb: x4, x8, x16 DDR2 SDRAM
Precharge power-down
Maintain power-down
Maintain self refresh
Self refresh entry
Power-down exit
Self refresh exit
Action (n)
REF
entry
) in self refresh and power-
Power-Down Mode
©2003 Micron Technology, Inc. All rights reserved.
t
CKE = 3 ×
7, 8, 11, 12
10, 12, 13
7, 9, 10
7, 8, 11
Notes
t
5, 6
7, 8
14
XSRD
6
t
CK.