MT28F008B3VG-9 TET TR Micron Technology Inc, MT28F008B3VG-9 TET TR Datasheet - Page 5
![IC FLASH 8MBIT 90NS 40TSOP](/photos/7/30/73004/mfg557-40-tsop_sml.jpg)
MT28F008B3VG-9 TET TR
Manufacturer Part Number
MT28F008B3VG-9 TET TR
Description
IC FLASH 8MBIT 90NS 40TSOP
Manufacturer
Micron Technology Inc
Datasheet
1.MT28F008B3VG-9_B.pdf
(30 pages)
Specifications of MT28F008B3VG-9 TET TR
Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
8M (1M x 8)
Speed
90ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
40-TSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Table 2:
NOTE:
10. Value reflects DQ8–DQ15.
09005aef81136a91
Q10.fm - Rev. E 6/04 EN
Standby
RESET
READ
READ (word mode)
READ (byte mode)
Output Disable
WRITE/ERASE (EXCEPT BOOT BLOCK)
ERASE SETUP
ERASE CONFIRM
WRITE SETUP
WRITE (word mode)
WRITE (byte mode)
READ ARRAY
WRITE/ERASE (BOOT BLOCK)
ERASE SETUP
ERASE CONFIRM
ERASE CONFIRM
WRITE SETUP
WRITE (word mode)
WRITE (word mode)
WRITE (byte mode)
WRITE (byte mode)
READ ARRAY
DEVICE IDENTIFICATION
Manufacturer Compatibility
(word mode)
Manufacturer Compatibility
(byte mode)
Device (word mode, top boot)
Device (byte mode, top boot)
Device (word mode, bottom
boot)
Device (byte mode, bottom
boot)
1. L = V
2. V
3. Operation must be preceded by ERASE SETUP command.
4. Operation must be preceded by WRITE SETUP command.
5. The READ ARRAY command must be issued before reading the array after writing or erasing.
6. When WP# = V
7. V
8. V
9. A1–A8, A10–A18 = V
ID
PPH
HH
10
= 12V; may also be read by issuing the IDENTIFY DEVICE command.
= 12V.
IL
= V
(LOW), H = V
FUNCTION
PPH
10
5
5
1 = 3.3V or V
Truth Table (MT28F800B3)
3
3
3, 6
IH
4
4
4, 6
4
4
4, 6
, RP# may be at V
IH
IL
.
8, 9
(HIGH), X = V
PPH
10
2, 7
2 = 5V.
RP#
V
V
V
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
L
HH
HH
HH
IH
2
IL
CE#
or V
or V
H
X
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
HH
IH
OE# WE# WP#
.
X
X
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
(“Don’t Care”).
L
L
L
L
L
L
L
L
H
H
H
H
H
H
H
H
H
1
X
X
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
SMART 3 BOOT BLOCK FLASH MEMORY
X
X
X
X
X
X
X
X
X
X
X
X
X
H
X
X
H
X
H
X
X
X
X
X
X
X
5
BYTE#
X
X
H
X
X
X
X
H
X
X
X
X
X
H
H
X
H
H
H
L
L
L
L
L
L
L
Micron Technology, Inc., reserves the right to change products or specifications without notice.
A0
H
H
H
H
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
L
L
V
V
V
V
V
V
A9
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
ID
ID
ID
ID
ID
ID
V
V
V
V
V
V
V
V
V
PPH
PPH
PPH
PPH
PPH
PPH
PPH
PPH
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
v
PP
Data-Out Data-Out Data-Out
Data-Out
10h/40h
10h/40h
Data-In
Data-In
Data-In
Data-In
Data-In
Data-In
High-Z
High-Z
High-Z
DQ0–
DQ7
D0h
D0h
D0h
9Dh
9Dh
9Ch
9Ch
20h
FFh
20h
FFh
89h
89h
©2001 Micron Technology, Inc. All rights reserved.
Data-In
Data-In
Data-In
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
DQ14
DQ8–
00h
88h
88h
X
X
X
X
X
X
X
X
X
X
X
X
8Mb
Data-In
Data-In
Data-In
High-Z
High-Z
High-Z
DQ15/
A-1
A-1
A-1
A-1
A-1
X
X
X
X
X
X
X
X
X
X
X
X
–
–
–