MT47H32M16BN-25E IT:D TR Micron Technology Inc, MT47H32M16BN-25E IT:D TR Datasheet - Page 71

• Manufacturer Part Number: MT47H32M16BN-25E IT:D TR
• Description: IC DDR2 SDRAM 512MBIT 84FBGA
• Manufacturer: Micron Technology Inc
• Type: DDR2 SDRAMr

Specifications of MT47H32M16BN-25E IT:D TR

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 512M (32Mx16)
• Speed: 2.5ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 84-FBGA
• Organization: 32Mx16
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 400ps
• Maximum Clock Rate: 800MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 295mA
• Pin Count: 84
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 32: Nominal Slew Rate for
Figure 33: Tangent Line for
PDF: 09005aef82f1e6e2
Rev. M 9/08 EN
Note:
Note:
Vih(dc) MIN
Vil(dc) MAX
Vil(ac) MAX
Vil(dc) MAX
Hold slew rate
rising signal
Vih(ac) MIN
Vih(ac) MIN
Vih(dc) MIN
Vil(ac) MAX
1. DQS, DQS# signals must be monotonic between Vil(DC) MAX and Vih(DC) MIN.
1. DQS, DQS# signals must be monotonic between Vil(DC) MAX and Vih(DC) MIN.
Vref(dc)
Vref(dc)
DQS# 1
DQS# 1
VddQ
VddQ
DQS 1
DQS 1
t
Vss
Vss
DH
Hold slew rate
rising signal
=
DC to Vref
DC to Vref
Tangent line (Vref[dc] - Vil[dc] MAX)
region
region
t
DH
=
Vref(dc) - Vil(dc) MAX
Tangent
ΔTR
Nominal
slew rate
t IS
t IS
line
ΔTR
t IH
t IH
71
ΔTR
ΔTR
Hold slew rate
falling signal
Hold slew rate
falling signal
Nominal
line
Micron Technology, Inc. reserves the right to change products or specifications without notice.
=
Nominal
slew rate
DC to Vref
t IS
Tangent line (Vih[dc] MIN - Vref[dc])
t IS
Tangent
=
region
DC to Vref
512Mb: x4, x8, x16 DDR2 SDRAM
line
Vih(dc) MIN - Vref(dc)
region
t IH
t IH
ΔTF
ΔTF
ΔTF
ΔTF
Nominal
line
Input Slew Rate Derating
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