MT47H64M8B6-3:D TR Micron Technology Inc, MT47H64M8B6-3:D TR Datasheet - Page 108

• Manufacturer Part Number: MT47H64M8B6-3:D TR
• Description: IC DDR2 SDRAM 512MBIT 3NS 60FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT47H64M8B6-3:D TR

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 3ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1215-2; MT47H64M8B6-3:D TR

Figure 64: WRITE – DM Operation
PDF: 09005aef82f1e6e2
512MbDDR2.pdf - Rev. O 7/09 EN
DQS, DQS#
Bank select
Command
Address
CK#
CKE
A10
DQ 7
DM
CK
NOP 1
T0
Notes:
Bank x
ACT
RA
RA
T1
t CK
1. NOP commands are shown for ease of illustration; other commands may be valid at
2. BL = 4, AL = 1, and WL = 2 in the case shown.
3. Disable auto precharge.
4. “Don’t Care” if A10 is HIGH at T11.
5.
6. Subsequent rising DQS signals must align to the clock within
7. DI n = data-in for column n; subsequent elements are applied in the programmed order.
8.
9.
NOP 1
T2
these times.
t
t
t
t CH
WR starts at the end of the data burst regardless of the data mask condition.
DSH is applicable during
DSS is applicable during
t RCD
t CL
Bank x
WRITE 2
Col n
3
T3
AL = 1
NOP 1
T4
WL ± t DQSS (NOM)
WL = 2
NOP 1
t
T5
108
t
DQSS (MAX) and is referenced from CK T7 or T8.
DQSS (MIN) and is referenced from CK T6 or T7.
t WPRE
NOP 1
T6
DI
n
t RAS
Micron Technology, Inc. reserves the right to change products or specifications without notice.
T6n
t DQSL t DQSH t WPST
512Mb: x4, x8, x16 DDR2 SDRAM
NOP 1
6
T7
T7n
NOP 1
T8
Transitioning Data
NOP 1
T9
©2004 Micron Technology, Inc. All rights reserved.
t
DQSS.
t WR 5
T10
NOP 1
One bank
All banks
Don’t Care
Bank x 4
T11
PRE
WRITE
t RPA