MT47H64M8B6-3:D TR Micron Technology Inc, MT47H64M8B6-3:D TR Datasheet - Page 11

• Manufacturer Part Number: MT47H64M8B6-3:D TR
• Description: IC DDR2 SDRAM 512MBIT 3NS 60FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT47H64M8B6-3:D TR

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 3ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1215-2; MT47H64M8B6-3:D TR

Functional Block Diagrams
Figure 3: 128 Meg x 4 Functional Block Diagram
PDF: 09005aef82f1e6e2
512MbDDR2.pdf - Rev. O 7/09 EN
BA0, BA1
A0–A13,
RAS#
CAS#
ODT
WE#
CKE
CK#
CS#
CK
16
Address
register
registers
Control
Mode
logic
16
counter
Refresh
14
11
2
The DDR2 SDRAM is a high-speed CMOS, dynamic random access memory. It is inter-
nally configured as a multibank DRAM.
14
address
2
Row-
MUX
Column-
counter/
control
address
Bank
logic
latch
14
latch and
decoder
address
Bank0
row-
Bank1
Bank2
Bank3
9
2
16,384
DM mask logic
(16,384 x 512 x 16)
Sense amplifiers
I/O gating
decoder
Column
8,192
Memory
Bank1
Bank0
array
(x16)
Bank2
512
Bank3
COL0, COL1
internal
CK, CK#
16
11
16
16
Read
latch
CK out
drivers
Write
FIFO
CK in
and
4
4
4
4
Micron Technology, Inc. reserves the right to change products or specifications without notice.
COL0, COL1
Mask
Data
MUX
16
4
generator
512Mb: x4, x8, x16 DDR2 SDRAM
DQS
1
1
1
1
4
4
4
4
registers
Input
Data
4
1
1
1
1
4
4
4
4
DQS, DQS#
2
Functional Block Diagrams
1
4
CK, CK#
DRVRS
2
DLL
RCVRS
©2004 Micron Technology, Inc. All rights reserved.
sw1 sw2
sw1 sw2
sw1 sw2
sw1 sw2
R1
R1
R1
R1
R1
R1
ODT control
R2
R2
R2
R2
R2
R2
VssQ
sw3
sw3
sw3
sw3
R3
R3
R3
R3
R3
R3
VddQ
DM
DQ0–DQ3
DQS, DQS#