MT47H64M8B6-25E L:D TR Micron Technology Inc, MT47H64M8B6-25E L:D TR Datasheet - Page 52

• Manufacturer Part Number: MT47H64M8B6-25E L:D TR
• Description: IC DDR2 SDRAM 512MBIT 60VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR2 SDRAMr

Specifications of MT47H64M8B6-25E L:D TR

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 2.5ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-FBGA
• Organization: 64Mx8
• Density: 512Mb
• Address Bus: 16b
• Access Time (max): 400ps
• Maximum Clock Rate: 800MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: 0C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 205mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1427-2

Table 19: Output Characteristics
Figure 18: Output Slew Rate Load
PDF: 09005aef82f1e6e2
Rev. M 9/08 EN
Parameter
Output impedance
Pull-up and pull-down mismatch
Output slew rate
Notes:
Output
(V
OUT
1. Absolute specifications: 0°C ≤ T
2. Impedance measurement conditions for output source DC current: VddQ = 1.7V;
3. Mismatch is an absolute value between pull-up and pull-down; both are measured at
4. Output slew rate for falling and rising edges is measured between Vtt - 250mV and
5. The absolute value of the slew rate as measured from Vil(DC) MAX to Vih(DC) MIN is
6. IT and AT devices require an additional 0.4 V/ns in the MAX limit when T
Vout = 1,420mV; (Vout - VddQ)/Ioh must be less than 23.4Ω for values of Vout between
VddQ and VddQ - 280mV. The impedance measurement condition for output sink DC
current: VddQ = 1.7V; Vout = 280mV; Vout/Iol must be less than 23.4Ω for values of Vout
between 0V and 280mV.
the same temperature and voltage.
Vtt + 250mV for single-ended signals. For differential signals (DQS, DQS#), output slew
rate is measured between DQS - DQS# = –500mV and DQS# - DQS = +500mV. Output
slew rate is guaranteed by design but is not necessarily tested on each device.
equal to or greater than the slew rate as measured from Vil(AC) MAX to Vih(AC) MIN.
This is guaranteed by design and characterization.
40°C and 0°C.
V
)
TT =
Output Electrical Characteristics and Operating Conditions
V
DD
25Ω
Reference
point
Q/2
Min
See Output Driver Characteristics (page 53)
1.5
0
52
C
≤ +85°C; VddQ = +1.8V ±0.1V, Vdd = +1.8V ±0.1V.
Nom
Micron Technology, Inc. reserves the right to change products or specifications without notice.
–
–
512Mb: x4, x8, x16 DDR2 SDRAM
Max
4
5
© 2004 Micron Technology, Inc. All rights reserved.
Units
V/ns
Ω
Ω
C
is between –
1, 4, 5, 6
Notes
1, 2, 3
1, 2