MT47H64M8B6-25E L:D TR Micron Technology Inc, MT47H64M8B6-25E L:D TR Datasheet - Page 73

• Manufacturer Part Number: MT47H64M8B6-25E L:D TR
• Description: IC DDR2 SDRAM 512MBIT 60VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR2 SDRAMr

Specifications of MT47H64M8B6-25E L:D TR

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 2.5ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-FBGA
• Organization: 64Mx8
• Density: 512Mb
• Address Bus: 16b
• Access Time (max): 400ps
• Maximum Clock Rate: 800MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: 0C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 205mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1427-2

Figure 36: AC Input Test Signal Waveform for Data with DQS (Single-Ended)
Figure 37: AC Input Test Signal Waveform (Differential)
PDF: 09005aef82f1e6e2
Rev. M 9/08 EN
Logic levels
Vtr
Vcp
Vref levels
DQS
VddQ
VssQ
Vswing
t DS
t DS
a
b
t DH
t DH
73
b
a
t DS
Crossing point
t DS
Vix
a
b
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t DH
t DH
512Mb: x4, x8, x16 DDR2 SDRAM
b
a
Input Slew Rate Derating
© 2004 Micron Technology, Inc. All rights reserved.
VddQ
Vih(ac) MIN
Vih(dc) MIN
Vref(dc)
Vil(dc) MAX
Vil(ac) MAX
VssQ
V ref