CY7C1399B-12ZC Cypress Semiconductor Corp, CY7C1399B-12ZC Datasheet - Page 7

IC SRAM 256KBIT 12NS 28TSOP

CY7C1399B-12ZC

Manufacturer Part Number
CY7C1399B-12ZC
Description
IC SRAM 256KBIT 12NS 28TSOP
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1399B-12ZC

Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
256K (32K x 8)
Speed
12ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
28-TSOP I
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
428-1049
Switching Waveforms
Document #: 38-05071 Rev. *B
Write Cycle No. 1 (WE Controlled)
Write Cycle No. 2 (CE Controlled)
Write Cycle No. 3 (WE Controlled, OE LOW)
Notes:
14. Data I/O is high impedance if OE = V
15. If CE goes HIGH simultaneously with WE HIGH, the output remains in a high-impedance state.
16. During this period, the I/Os are in the output state and input signals should not be applied.
ADDRESS
ADDRESS
ADDRESS
DATA I/O
DATA I/O
DATA I/O
CE
WE
WE
WE
OE
CE
CE
NOTE 16
NOTE 16
t
SA
(continued)
t
SA
IH
t
HZOE
.
[9, 14, 15]
[9, 14, 15]
t
HZWE
t
SA
[10, 15]
t
AW
t
t
AW
AW
t
WC
t
t
WC
WC
DATA
t
PWE
t
SD
DATA
DATA
IN
t
SCE
t
SD
t
VALID
SD
IN
IN
VALID
VALID
t
HD
t
t
t
HA
HA
t
LZWE
HA
t
t
HD
HD
CY7C1399B
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