CY7C1399B-15VC Cypress Semiconductor Corp, CY7C1399B-15VC Datasheet - Page 5

• Manufacturer Part Number: CY7C1399B-15VC
• Description: IC SRAM 256KBIT 15NS 28SOJ
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1399B-15VC

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 256K (32K x 8)
• Speed: 15ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 28-SOJ
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 428-1050

Switching Characteristics
Data Retention Characteristics
Document #: 38-05071 Rev. *B
Read Cycle
t
t
t
t
t
t
t
t
t
t
t
Write Cycle
t
t
t
t
t
t
t
t
t
t
V
I
t
t
RC
AA
OHA
ACE
DOE
LZOE
HZOE
LZCE
HZCE
PU
PD
WC
SCE
AW
HA
SA
PWE
SD
HD
HZWE
LZWE
CCDR
CDR
R
DR
Parameter
Parameter
[9, 10]
Read Cycle Time
Address to Data Valid
Data Hold from Address Change
CE LOW to Data Valid
OE LOW to Data Valid
OE LOW to Low Z
OE HIGH to High Z
CE LOW to Low Z
CE HIGH to High Z
CE LOW to Power-Up
CE HIGH to Power-Down
Write Cycle Time
CE LOW to Write End
Address Set-Up to Write End
Address Hold from Write End
Address Set-Up to Write Start
WE Pulse Width
Data Set-Up to Write End
Data Hold from Write End
WE LOW to High Z
WE HIGH to Low Z
V
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
CC
for Data Retention
Over the Operating Range
Description
[7]
[7]
[7, 8]
[7, 8]
[9]
[7]
(Over the Operating Range - L version only)
Description
Com’l
[6]
(Continued)
V
CE > V
V
V
IN
IN
CC
> V
< 0.3V
= V
CC
Conditions
CC
DR
– 0.3V,
– 0.3V or
= 2.0V,
Min.
15
15
10
10
10
3
0
3
0
0
0
8
0
3
1399B-15
Max.
15
15
15
6
6
7
7
Min.
2.0
t
RC
0
0
Min.
20
20
12
12
12
10
3
0
3
0
0
0
0
3
1399B-20
Max.
20
CY7C1399B
Max.
20
20
20
7
6
7
7
Page 5 of 10
Unit
ns
ns
Unit
V
A
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns