M29W800DB90N6T STMicroelectronics, M29W800DB90N6T Datasheet
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M29W800DB90N6T
Specifications of M29W800DB90N6T
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M29W800DB90N6T Summary of contents
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... BLOCK ELECTRONIC SIGNATURE – Manufacturer Code: 0020h – Top Device Code M29W800DT: 22D7h – Bottom Device Code M29W800DB: 225Bh April 2004 8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory Figure 1. Packages M29W800DT M29W800DB SO44 (M) TSOP48 ( 20mm FBGA TFBGA48 (ZA FBGA ...
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M29W800DT, M29W800DB TABLE OF CONTENTS FEATURES SUMMARY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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Unlock Bypass Program Command ...
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M29W800DT, M29W800DB Table 18. TFBGA48 6x9mm – 6x8 active ball array – 0.80mm pitch, Package Mechanical Data Figure 19.TFBGA48 6x8mm – 6x8 ball array – 0.80mm pitch, Bottom View Package Outline . . . . 27 Table 19. ...
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... They allow simple connection to most micropro- cessors, often without additional logic. The memory is offered in SO44, TSOP48 (12 x 20mm), TFBGA48 6 x 9mm (0.8mm pitch) and TFBGA48 6 x 8mm (0.8mm pitch) packages. The memory is supplied with all the bits erased (set to ’1’). Table 1. Signal Names A0-A18 DQ0-DQ7 ...
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M29W800DT, M29W800DB Figure 3. SO Connections RP 1 A18 2 A17 M29W800DT M29W800DB DQ0 15 DQ8 ...
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Figure 5. TFBGA Connections (Top view through package A17 NC A6 A18 ...
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M29W800DT, M29W800DB Figure 6. Block Addresses (x8) M29W800DT Top Boot Block Addresses (x8) FFFFFh 16 KByte FC000h FBFFFh 8 KByte FA000h F9FFFh 8 KByte F8000h F7FFFh 32 KByte F0000h EFFFFh 64 KByte E0000h 1FFFFh 64 KByte 10000h 0FFFFh 64 KByte ...
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Figure 7. Block Addresses (x16) M29W800DT Top Boot Block Addresses (x16) 7FFFFh 8 KWord 7E000h 7DFFFh 4 KWord 7D000h 7CFFFh 4 KWord 7C000h 7BFFFh 16 KWord 78000h 77FFFh 32 KWord 70000h 0FFFFh 32 KWord 08000h 07FFFh 32 KWord 00000h Note: ...
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... Names, for a brief overview of the signals connect this device. Address Inputs (A0-A18). The Address Inputs select the cells in the memory array to access dur- ing Bus Read operations. During Bus Write opera- tions they control the commands sent to the Command Interface of the internal state machine. ...
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... Disable, Standby and Automatic Standby. See Tables 2 and 3, Bus Operations, for a summary. Typically glitches of less than 5ns on Chip Enable or Write Enable are ignored by the memory and do not affect bus operations. Bus Read. Bus Read operations read from the memory cells, or specific registers in the Com- mand Interface ...
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... From the Auto Select mode the Manufacturer Code can be read using a Bus Read operation with may be set to either V Code for STMicroelectronics is 0020h. The Device Code can be read using a Bus Read operation with address bits may be set to either V Device Code for the M29W800DT is 22D7h and for the M29W800DB is 225Bh ...
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... Once the Unlock Bypass command has been is- sued the memory will only accept the Unlock By- pass Program command and the Unlock Bypass Reset command. The memory can be read Read mode. Unlock Bypass Program Command. The lock Bypass Program command can be used to program one address in memory at a time ...
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... Erase Suspend Latency Time (refer to Table 6 for value) of the Erase Suspend Command being issued. Once the Program/Erase Controller has stopped the memory will be set to Read mode and the Erase will be suspended. If the Erase Suspend command is issued during the period when the ...
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Table 4. Commands, 16-bit mode, BYTE = V Command Addr Data 1 X Read/Reset 3 555 Auto Select 3 555 Program 4 555 Unlock Bypass 3 555 Unlock Bypass 2 X Program Unlock Bypass Reset 2 X Chip Erase 6 ...
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M29W800DT, M29W800DB Table 5. Commands, 8-bit mode, BYTE = V Command Addr Data 1 X Read/Reset 3 AAA Auto Select 3 AAA Program 4 AAA Unlock Bypass 3 AAA Unlock Bypass 2 X Program Unlock Bypass Reset 2 X Chip ...
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... One of the Erase commands must be used to set all the bits in a block or in the whole memory from ’0’ to ’1’ Erase Timer Bit (DQ3). The Erase Timer Bit can be used to identify the start of Program/Erase Controller operation during a Block Erase com- mand ...
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M29W800DT, M29W800DB Table 7. Status Register Bits Operation Address Program Any Address Program During Erase Any Address Suspend Program Error Any Address Chip Erase Any Address Erasing Block Block Erase before timeout Non-Erasing Block Erasing Block Block Erase Non-Erasing Block ...
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... Note: 1. Minimum voltage may undershoot to –2V during transition and for less than 20ns during transitions. 2. Maximum voltage may overshoot to V these or any other conditions above those indicat the Operating sections of this specification is not implied. Refer also to the STMicroelectronics SURE Program and other relevant quality docu- ments. Parameter (1,2) +2V during transition and for less than 20ns during transitions ...
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M29W800DT, M29W800DB DC AND AC PARAMETERS This section summarizes the operating measure- ment conditions, and the DC and AC characteris- tics of the device. The parameters in the DC and AC characteristics Tables that follow, are derived from tests performed ...
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Table 11. DC Characteristics Symbol Parameter I Input Leakage Current LI I Output Leakage Current LO I Supply Current (Read) CC1 I Supply Current (Standby) CC2 (1) Supply Current (Program/Erase) I CC3 V Input Low Voltage IL V Input High ...
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M29W800DT, M29W800DB Table 12. Read AC Characteristics Symbol Alt t t Address Valid to Next Address Valid AVAV Address Valid to Output Valid AVQV ACC (1) t Chip Enable Low to Output Transition t LZ ELQX t ...
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Figure 13. Write AC Waveforms, Write Enable Controlled A0-A18/ A– DQ0-DQ7/ DQ8-DQ15 V CC tVCHEL RB Table 13. Write AC Characteristics, Write Enable Controlled Symbol Alt t t Address Valid to Next Address Valid AVAV WC t ...
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M29W800DT, M29W800DB Figure 14. Write AC Waveforms, Chip Enable Controlled A0-A18/ A– DQ0-DQ7/ DQ8-DQ15 V CC tVCHWL RB Table 14. Write AC Characteristics, Chip Enable Controlled Symbol Alt t t Address Valid to Next Address Valid AVAV ...
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Figure 15. Reset/Block Temporary Unprotect AC Waveforms tPLPX RP Table 15. Reset/Block Temporary Unprotect AC Characteristics Symbol Alt (1) t PHWL RP High to Write Enable Low, Chip Enable Low PHEL RH Output Enable ...
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M29W800DT, M29W800DB PACKAGE MECHANICAL Figure 16. SO44 – 44 lead Plastic Small Outline, 525 mils body width, Package Outline Note: Drawing is not to scale. Table 16. SO44 – 44 lead Plastic Small Outline, 525 ...
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Figure 17. TSOP48 – 48 lead Plastic Thin Small Outline 20mm, Package Outline DIE Note: Drawing is not to scale. Table 17. TSOP48 – 48 lead Plastic Thin Small Outline 20mm, ...
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M29W800DT, M29W800DB Figure 18. TFBGA48 6x9mm – 6x8 ball array – 0.80mm pitch, Bottom View Package Outline FE BALL "A1" Note: Drawing is not to scale. Table 18. TFBGA48 6x9mm – 6x8 active ball array – 0.80mm pitch, ...
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Figure 19. TFBGA48 6x8mm – 6x8 ball array – 0.80mm pitch, Bottom View Package Outline FE BALL "A1" Note: Drawing is not to scale. Table 19. TFBGA48 6x8mm – 6x8 active ball array – 0.80mm pitch, Package Mechanical ...
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... E = Lead-free Package, Standard Packing F = Lead-free Package, Tape & Reel Packing Devices are shipped from the factory with the memory content bits erased to ’1’. For a list of available options (Speed, Package, etc.) or for further information on any aspect of this device, please contact your nearest ST Sales Office. ...
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APPENDIX A. BLOCK ADDRESS TABLE Table 21. Top Boot Block Addresses, M29W800DT Size Address Range # (Kbytes) (x8 FC000h-FFFFFh 17 8 FA000h-FBFFFh 16 8 F8000h-F9FFFh 15 32 F0000h-F7FFFh 14 64 E0000h-EFFFFh 13 64 D0000h-DFFFFh 12 64 C0000h-CFFFFh 11 ...
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... Note: Query data are always presented on the lowest order data outputs (DQ7-DQ0) only. DQ8-DQ15 are ‘0’. 32/41 is read from the memory. Tables 23, 24, 25, 26, 27 and 27 show the addresses used to retrieve the data. The CFI data structure also contains a security area where a 64 bit unique security number is writ- ten (see Table , Security Code area) ...
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Table 25. CFI Query System Interface Information Address Data x16 x8 1Bh 36h 0027h 1Ch 38h 0036h 1Dh 3Ah 0000h 1Eh 3Ch 0000h 1Fh 3Eh 0004h 20h 40h 0000h 21h 42h 000Ah 22h 44h 0000h 23h 46h 0004h 24h 48h ...
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M29W800DT, M29W800DB Address Data x16 x8 37h 6Eh 0080h 38h 70h 0000h 39h 72h 000Eh 3Ah 74h 0000h 3Bh 76h 0000h 3Ch 78h 0001h Table 27. Primary Algorithm-Specific Extended Query Table Address Data x16 x8 40h 80h 0050h 41h 82h ...
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... Unlike the Command Interface of the Program/ Erase Controller, the techniques for protecting and unprotecting blocks change between different Flash memory suppliers. For example, the tech- niques for AMD parts will not work on STMicro- electronics parts. Care should be taken when changing drivers for one part to work on another. ...
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M29W800DT, M29W800DB Figure 20. Programmer Equipment Block Protect Flowchart 36/41 START ADDRESS = BLOCK ADDRESS Wait 4µ Wait 100µs ...
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Figure 21. Programmer Equipment Chip Unprotect Flowchart NO = 1000 START PROTECT ALL BLOCKS CURRENT BLOCK = 0 A6, A12, A15 = ...
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M29W800DT, M29W800DB Figure 22. In-System Equipment Block Protect Flowchart 38/41 START WRITE 60h ADDRESS = BLOCK ADDRESS WRITE 60h ...
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Figure 23. In-System Equipment Chip Unprotect Flowchart ++ 1000 ISSUE READ/RESET COMMAND FAIL START PROTECT ALL BLOCKS CURRENT BLOCK = WRITE 60h ANY ADDRESS WITH A0 ...
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M29W800DT, M29W800DB REVISION HISTORY Table 30. Document Revision History Version August 2001 1.0 First Issue Block Protection Appendix added, SO44 drawing and package mechanical data updated, 03-Dec-2001 2.0 CFI Table 26, address 39h/72h data clarified, Read/Reset operation during Erase Suspend ...
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... No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics ...