CY62128BLL-70SXC Cypress Semiconductor Corp, CY62128BLL-70SXC Datasheet - Page 4

• Manufacturer Part Number: CY62128BLL-70SXC
• Description: IC SRAM 1MBIT 70NS 32SOIC
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY62128BLL-70SXC

• Format - Memory: RAM
• Memory Type: SRAM
• Memory Size: 1M (128K x 8)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 32-SOIC (11.30mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 428-1746-5; CY62128BLL-70SXC

Document #: 38-05300 Rev. *C
Data Retention Waveform
Thermal Resistance
Capacitance
AC Test Loads and Waveforms
Data Retention Characteristics
OUTPUT
Parameter
C
C
V
I
t
t
Note:
Parameter
Equivalent to:
CCDR
CDR
R
6.
DR
IN
OUT
INCLUDING
JIG AND
SCOPE
Θ
Θ
CE
or
V
Tested initially and after any design or process changes that may affect these parameters.
CE 2
5V
Parameter
JA
JC
CC
1
OUTPUT
100 pF
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
V
Data Retention Current
Chip Deselect to Data Retention
Time
Operation Recovery Time
[6]
CC
(a)
Description
THÉVENIN EQUIVALENT
for Data Retention
R1 1800Ω
639 Ω
Input Capacitance
Output Capacitance
Description
[6]
990
R2
Description
Ω
OUTPUT
Test conditions follow standard test
methods and procedures for
measuring thermal impedance, per
EIA / JESD51.
V
1.77V
t
INCLUDING
JIG AND
SCOPE
CC
CDR
(Over the Operating Range for “LL” version only)
5V
, min.
Test Conditions
5 pF
V
or CE
0.3V
(b)
CC
R1 1800Ω
= V
T
V
DATA RETENTION MODE
2
A
CC
≤ 0.3V, V
DR
= 25°C, f = 1 MHz,
= 5.0V
= 2.0V, CE
V
Test Conditions
DR
990 Ω
Conditions
R2
IN
> 2 V
≥ V
32 SOIC 32 TSOP 32 STSOP 32 RTSOP
1
CC
66.17
30.87
≥ V
GND
V
– 0.3V or, V
CC
CC
Rise TIme:
1 V/ns
– 0.3V,
97.44
26.05
IN
≤
10%
V
90%
CC
ALL INPUT PULSES
t
R
105.14
, min.
Min.
14.09
2.0
Max.
70
0
9
9
Typ.
1.5
CY62128B
97.44
26.05
Max.
MoBL
Page 4 of 11
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Unit
pF
pF
90%
Fall TIme:
1 V/ns
°C/W
°C/W
Unit
10%
Unit
µA
ns
ns
V
®
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