CY7C1049CV33-20VXC Cypress Semiconductor Corp, CY7C1049CV33-20VXC Datasheet - Page 7

• Manufacturer Part Number: CY7C1049CV33-20VXC
• Description: IC SRAM 4MBIT 20NS 36SOJ
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1049CV33-20VXC

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 4M (512K x 8)
• Speed: 20ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 36-SOJ
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 428-1738; CY7C1049CV3320VXC; CY7C1049CV3320VXC

Document #: 38-05006 Rev. *E
Switching Waveforms
Read Cycle No. 2 (OE Controlled)
Write Cycle No. 1(WE Controlled, OE HIGH During Write)
Notes:
14. Address valid prior to or coincident with CE transition LOW.
15. Data I/O is high-impedance if OE = V
16. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state.
17. During this period the I/Os are in the output state and input signals should not be applied.
DATA OUT
ADDRESS
ADDRESS
CURRENT
DATA I/O
SUPPLY
CE
CE
V
WE
OE
OE
CC
NOTE 17
HIGH IMPEDANCE
t
PU
(continued)
IH
t
LZCE
.
t
SA
t
HZOE
[13, 14]
t
t
LZOE
ACE
50%
t
DOE
t
AW
t
t
RC
SCE
[15, 16]
t
WC
DATA
t
t
PWE
SD
IN
DATA VALID
VALID
t
HZOE
t
HA
t
HD
t
CY7C1049CV33
HZCE
t
PD
50%
IMPEDANCE
Page 7 of 11
HIGH
I
I
CC
SB
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