M48Z58Y-70MH1E STMicroelectronics, M48Z58Y-70MH1E Datasheet - Page 12

IC NVSRAM 64KBIT 70NS 28SOIC

M48Z58Y-70MH1E

Manufacturer Part Number
M48Z58Y-70MH1E
Description
IC NVSRAM 64KBIT 70NS 28SOIC
Manufacturer
STMicroelectronics
Datasheet

Specifications of M48Z58Y-70MH1E

Format - Memory
RAM
Memory Type
NVSRAM (Non-Volatile SRAM)
Memory Size
64K (8K x 8)
Speed
70ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Package / Case
28-SOIC, 28-SOH (8.48mm Width)
Data Bus Width
8 bit
Organization
8 Kbit x 8
Interface Type
Parallel
Access Time
70 ns
Supply Voltage (max)
5.5 V
Supply Voltage (min)
4.5 V
Operating Current
50 mA
Maximum Operating Temperature
+ 70 C
Minimum Operating Temperature
0 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-5374-5
M48Z58Y-70MH1E

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M48Z58Y-70MH1E
Manufacturer:
STMicroelectronics
Quantity:
135
Part Number:
M48Z58Y-70MH1E
Manufacturer:
ST
Quantity:
20 000
Operating modes
2.4
12/24
V
I
fluctuations, resulting in spikes on the V
capacitors are used to store energy which stabilizes the V
bypass capacitors will be released as low going spikes are generated or energy will be
absorbed when overshoots occur. A ceramic bypass capacitor value of 0.1 µF (see
is recommended in order to provide the needed filtering.
In addition to transients that are caused by normal SRAM operation, power cycling can
generate negative voltage spikes on V
one volt. These negative spikes can cause data corruption in the SRAM while in battery
backup mode. To protect from these voltage spikes, ST recommends connecting a schottky
diode from V
is recommended for through hole and MBRS120T3 is recommended for surface mount).
Figure 8.
CC
CC
transients, including those produced by output switching, can produce voltage
noise and negative going transients
CC
Supply voltage protection
to V
SS
(cathode connected to V
V CC
Doc ID 2559 Rev 10
0.1µF
CC
CC
that drive it to values below V
bus. These transients can be reduced if
CC
, anode to V
V CC
V SS
DEVICE
CC
bus. The energy stored in the
SS
). (Schottky diode 1N5817
SS
M48Z58, M48Z58Y
by as much as
Figure
AI02169
8)

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