CY7C1399B-15VXIT Cypress Semiconductor Corp, CY7C1399B-15VXIT Datasheet - Page 4

• Manufacturer Part Number: CY7C1399B-15VXIT
• Description: IC SRAM 256KBIT 15NS 28SOJ
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1399B-15VXIT

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 256K (32K x 8)
• Speed: 15ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 28-SOJ
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document #: 38-05071 Rev. *D
Switching Characteristics
Read Cycle
t
t
t
t
t
t
t
t
t
t
t
Write Cycle
t
t
t
t
t
t
t
t
t
t
Notes:
10. The minimum write cycle time for write cycle #3 (WE controlled, OE LOW) is the sum of t
RC
AA
OHA
ACE
DOE
LZOE
HZOE
LZCE
HZCE
PU
PD
WC
SCE
AW
HA
SA
PWE
SD
HD
HZWE
LZWE
6. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified
7. At any given temperature and voltage condition, t
8. t
9. The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. Both signals must be LOW to initiate a write and either signal can
I
terminate a write by going HIGH. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the write.
OL
HZOE
Parameter
/I
OH
, t
HZCE
and capacitance C
[9, 10]
, t
HZWE
are specified with C
Read Cycle Time
Address to Data Valid
Data Hold from Address Change
CE LOW to Data Valid
OE LOW to Data Valid
OE LOW to Low Z
OE HIGH to High Z
CE LOW to Low Z
CE HIGH to High Z
CE LOW to Power-Up
CE HIGH to Power-Down
Write Cycle Time
CE LOW to Write End
Address Set-Up to Write End
Address Hold from Write End
Address Set-Up to Write Start
WE Pulse Width
Data Set-Up to Write End
Data Hold from Write End
WE LOW to High Z
WE HIGH to Low Z
L
= 30 pF.
Over the Operating Range
L
= 5 pF as in AC Test Loads. Transition is measured ±500 mV from steady state voltage.
[7]
[7]
Description
[7, 8]
[9]
[7]
[7, 8]
HZCE
is less than t
LZCE
, t
[6]
HZOE
is less than t
HZWE
LZOE
Min.
10
10
and t
3
0
3
8
7
0
0
7
5
0
3
0
1399B-10
, and t
SD
.
HZWE
Max.
10
10
10
5
5
5
7
is less than t
Min.
LZWE
12
12
3
0
3
8
8
0
0
8
7
0
3
0
1399B-12
for any given device.
CY7C1399B
Max.
12
12
12
5
6
7
5
Page 4 of 10
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns