CY7C199CN-12VXIT Cypress Semiconductor Corp, CY7C199CN-12VXIT Datasheet - Page 8
![IC SRAM 256KBIT 12NS 28SOJ](/photos/7/9/70998/428-28-soj_sml.jpg)
CY7C199CN-12VXIT
Manufacturer Part Number
CY7C199CN-12VXIT
Description
IC SRAM 256KBIT 12NS 28SOJ
Manufacturer
Cypress Semiconductor Corp
Datasheet
1.CY7C199CN-12VXI.pdf
(14 pages)
Specifications of CY7C199CN-12VXIT
Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
256K (32K x 8)
Speed
12ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
28-SOJ
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Timing Waveforms
Write Cycle 1 (WE controlled)
Write Cycle 2 (CE controlled)
Notes
Document #: 001-06435 Rev. *B
13. This cycle is WE controlled, OE is HIGH during write.
14. Data in and/or out is high impedance if OE = V
15. During this period the IOs are in output state and input signals must not be applied.
16. This cycle is CE controlled.
17. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high impedance state.
Data In/Out
Data In/Out
Address
Address
WE
WE
OE
CE
CE
Undefined
see footnotes
High Z
(continued)
[14, 16, 17]
[13, 14, 15]
t
t
HZOE
SA
IH
.
t
SA
t
AW
t
SCE
t
AW
Data-In Valid
t
t
WC
WC
Data-In Valid
t
t
t
SD
PWE
SD
t
SCE
t
t
HA
HD
t
HD
t
HA
CY7C199CN
High Z
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