CY7C199CN-20ZXI Cypress Semiconductor Corp, CY7C199CN-20ZXI Datasheet - Page 6

• Manufacturer Part Number: CY7C199CN-20ZXI
• Description: IC SRAM 256KBIT 20NS 28TSOP
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C199CN-20ZXI

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 256K (32K x 8)
• Speed: 20ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 28-TSOP I
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes
AC Electrical Characteristics
Data Retention Characteristics
Document #: 001-06435 Rev. *B
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
V
I
t
t
4. Test Conditions are based on a transition time of 3 ns or less and timing reference levels of 1.5V, and input pulse levels of 0 to 3.0V.
5. At any given temperature and voltage condition, t
6. t
7. The internal memory write time is defined by the overlap of CE LOW and WE LOW. CE and WE must be LOW to initiate a write, and the transition of any of these
8. L-version only.
RC
AA
OHA
ACE
DOE
LZOE
HZOE
LZCE
HZCE
PU
PD
WC
SCE
AW
HA
SA
PWE
SD
HD
HZWE
LZWE
Parameter
CCDR
CDR
R
Parameter
DR
signals can terminate the write. The input data setup and hold timing must be referenced to the leading edge of the signal that terminates the write.
HZOE
, t
HZCE
, t
V
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
Read Cycle Time
Address to Data Valid
Data Hold from Address
Change
CE to Data Valid
OE to Data Valid Ind’l/Com’l
OE to Low-Z
OE to High-Z
CE to Low-Z
CE to High-Z
CE to Power Up
CE to Power Down
Write Cycle Time
CE to Write End
Address Setup to Write End
Address Hold from Write End
Address Setup to Write Start
WE Pulse Width
Data Setup to Write End
Data Hold from Write End
WE LOW to High-Z
WE HIGH to Low-Z
HZWE
CC
for Data Retention
are specified as in part (b) of the
Description
Description
[5]
[5]
[5, 6]
[5, 6]
Automotive-A
[7]
[5, 6]
[5]
[4]
V
V
[8]
HZCE
CC
IN
≥ V
“” on page
= V
is less than t
Min
CC
12
12
DR
–
3
–
–
–
0
–
3
–
0
–
9
9
0
0
8
8
0
–
3
– 0.3V or V
= 2.0V, CE ≥ V
–12
1. Transitions are measured ± 200 mV from steady state voltage.
LZCE
Max
12
12
12
–
–
5
6
–
5
–
5
–
–
–
–
–
–
–
–
–
7
–
, t
Condition
HZOE
IN
≤ 0.3V
is less than t
Min
CC
15
15
10
10
–
3
–
–
–
0
–
3
–
0
–
0
0
9
9
0
–
3
– 0.3V,
–15
LZOE
Max
15
15
15
–
–
7
–
–
7
–
7
–
–
–
–
–
–
–
–
–
7
–
, and t
HZWE
Min
20
20
15
15
15
10
–
3
–
–
–
0
–
3
–
0
–
0
0
0
–
3
is less than t
–20
Max
20
20
20
10
Min
–
–
9
–
–
9
–
9
–
–
–
–
–
–
–
–
–
–
200
2.0
–
0
LZWE
for any given device.
Min
25
25
15
15
15
10
–
3
–
–
–
0
–
3
–
0
–
0
0
0
–
3
CY7C199CN
–25
Max
150
–
–
–
Max
25
25
20
10
Page 6 of 14
–
–
9
–
–
9
–
9
–
–
–
–
–
–
–
–
–
–
Unit
Unit
µA
ns
µs
V
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns